Methods of singulating substrates to form semiconductor devices using dummy material

Patent metadata

Field	Value
Publication number	US-9257342-B2
Application number	US-201414260903-A
Country	US
Kind code	B2
Filing date	Apr 24, 2014
Priority date	Apr 20, 2012
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

First claim

What is claimed is:

1. A method of forming a semiconductor device, the method comprising:
forming a plurality of active elements in a semiconductor substrate having a first side and an opposite second side, the plurality of active elements being formed adjacent the first side;
forming metallization, at the first side, over the plurality of active elements to form a plurality of devices;
forming openings in the semiconductor substrate, the openings surrounding each of the plurality of devices; and
forming a dummy plug within the openings;
providing a tape over the opposite second side of the semiconductor substrate;
providing a frame and an adhesive covering the first side of the semiconductor substrate,
wherein a portion of the adhesive is disposed within the openings covering the dummy plug; and
singulating the semiconductor substrate
by removing the frame and the adhesive and
followed by removing the dummy plug in the openings from the first side of the semiconductor substrate.

2. The method of claim 1 , wherein the openings comprise a mesh like shape.

3. The method of claim 1 , wherein each of the plurality of devices comprise an integrated circuit.

4. The method of claim 1 , wherein the plurality of active elements comprises transistors.

5. The method of claim 1 , further comprising:
thinning the semiconductor substrate to expose the dummy plugs.

6. The method of claim 1 , wherein the dummy plug comprises amorphous carbon.

7. The method of claim 6 , wherein the amorphous carbon comprises tetrahedral amorphous carbon.

8. The method of claim 6 , wherein the amorphous carbon comprises hydrogenated amorphous carbon.

9. The method of claim 1 , wherein the dummy plug comprises carbon and fluorine.

10. The method of claim 1 , wherein the dummy plug comprises nanostructured carbon.

11. The method of claim 1 , wherein the dummy plug comprises polycrystalline carbon.

12. The method of claim 1 , wherein the dummy plug comprises at least 90% carbon.

13. The method of claim 1 , wherein removing the dummy plug comprises using an oxidizing plasma process.

14. The method of claim 1 , wherein the adhesive is removed using a wet etching process and the dummy plug is removed using an oxygen plasma process.

15. A method of forming a semiconductor device, the method comprising:
forming openings in a substrate;
forming a dummy fill material within the openings;
forming an adhesive
covering a top surface of the substrate,
wherein a portion of the adhesive is disposed within the openings covering the dummy fill material;

attaching the substrate to a carrier through the adhesive;
thinning the substrate to expose the dummy fill material in the openings;
placing a bottom surface of the substrate over a tape;
removing the carrier and adhesive after placing the substrate over the tape; and
singulating the substrate by removing the dummy fill material in the openings,
wherein the dummy fill material is removed after removing the carrier and the adhesive.

16. The method of claim 15 , wherein the substrate comprises a plurality of dies adjacent a front side than an opposite back side.

17. The method of claim 15 , further comprising forming a back side metallization layer after thinning the substrate but before removing the dummy fill material.

18. The method of claim 15 , further comprising forming active regions adjacent a front side of the substrate and forming metallization layer over the active regions.

19. The method of claim 15 , wherein removing the dummy fill material comprises using an oxidizing plasma process.

20. A method of forming a semiconductor device, the method comprising:
forming openings in a substrate;
forming a dummy fill material within the openings;
forming a dummy plug
by removing the dummy fill material from over a top surface of the substrate
before thinning the substrate;

providing a frame and an adhesive
covering the top surface of the substrate,
wherein a portion of the adhesive is disposed within the openings covering the dummy plug;

thinning the substrate to expose the dummy fill material in the openings;
placing a tape over a bottom surface of the substrate; and
singulating the substrate
by removing the frame and the adhesive and
followed by removing the dummy fill material in the openings.

21. The method of claim 20 , wherein forming the openings comprises:
forming a masking layer over the substrate;
forming an etch mask by patterning the masking layer; and
etching the substrate using the etch mask.

22. The method of claim 21 , wherein etching the substrate using the etch mask comprising using a oxidizing plasma process.

Assignees

• Infineon Technologies Ag

Inventors

• Stranzl Gudrun
• Zgaga Martin
• Kahn Markus
• Denifl Guenter

Classifications

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P14/687

  the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title