Etch process with pre-etch transient conditioning

Patent metadata

Field	Value
Publication number	US-9257296-B2
Application number	US-201514845188-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Dec 14, 2012
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.

First claim

What is claimed is:

1. A method for etching features with different aspect ratios in an etch layer, comprising:
a plurality of cycles, wherein each cycle comprises:
a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration, wherein the pre-etch transient conditioning comprises
providing a pre-etch transient conditioning gas consisting essentially of He and O 2 ; and
forming the pre-etch transient conditioning gas into a plasma; and

etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence, wherein the etching follows the pre-etch transient conditioning, wherein the etching taking place within the duration of the transient condition provides a lower aspect ratio dependent etch than etching past the duration of the transient condition.

2. The method, as recited in claim 1 , wherein the pre-etch transient conditioning does not etch.

3. The method, as recited in claim 2 , wherein the plurality of cycles further comprise a break through step and sidewall passivation formation step after the break through step.

4. The method, as recited in claim 3 , wherein the etch layer is a silicon layer.

5. The method, as recited in claim 4 , wherein a continuous plasma is provided from the pre-etching transient conditioning and the etching.

6. The method, as recited in claim 5 , wherein the continuous plasma is provided for a plurality of cycles.

7. The method, as recited in claim 1 , wherein the plurality of cycles further comprise a break through step and sidewall passivation formation step after the break through step.

8. The method, as recited in claim 1 , wherein the etch layer is a silicon layer.

9. The method, as recited in claim 8 , wherein the silicon layer is polysilicon or crystalline silicon.

10. The method, as recited in claim 1 , wherein a continuous plasma is provided from the pre-etching transient conditioning and the etching.

11. The method, as recited in claim 10 , wherein the continuous plasma is provided for a plurality of cycles.

12. The method as recited in claim 1 , wherein the transient condition has a half-life, and wherein the duration of the etching is at least as long as the half-life.

Assignees

• Lam Res Corp

Inventors

• Lee Wonchul
• Fu Qian
• Drewery John S

Classifications

• H10P50/268

  of silicon-containing layers · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10P50/69

  using masks for semiconductor materials · CPC title

• H10P50/244 Primary

  comprising alternated and repeated etching and passivation steps · CPC title

• H01L21/30655 Primary

  Electricity · mapped topic