Chemical mechanical polishing machine and polishing head assembly

Patent metadata

Field	Value
Publication number	US-9254546-B2
Application number	US-201314045157-A
Country	US
Kind code	B2
Filing date	Oct 3, 2013
Priority date	Feb 19, 2013
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A chemical mechanical polishing machine includes a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body. The bottom surface of the membrane includes a hydrophobic area and a hydrophilic area.

First claim

What is claimed is:

1. A chemical mechanical polishing machine comprising:
a turntable having a substantially flat top surface and configured to rotate horizontally;
a polishing pad on the top surface of the turntable;
a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body, wherein the membrane is configured to be in contact with a back surface of a wafer,
wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area.

2. The chemical mechanical polishing machine of claim 1 , wherein the membrane comprises a plurality of holes.

3. The chemical mechanical polishing machine of claim 2 , wherein the plurality of holes are formed in the hydrophilic area.

4. The chemical mechanical polishing machine of claim 1 , further comprising a wafer loader including a support unit which is configured to support the membrane thereon, wherein the wafer loader further comprises a nozzle configured to supply water between the membrane and the support unit.

5. The chemical mechanical polishing machine of claim 1 , wherein the hydrophilic area is located on an inner portion of the bottom surface of the membrane, and the hydrophobic area is located on an outer portion of the bottom surface of the membrane.

6. The chemical mechanical polishing machine of claim 5 , wherein the bottom surface of the membrane further comprises a center region disposed in the inner portion, wherein the center region is hydrophobic.

7. The chemical mechanical polishing machine of claim 6 , wherein the bottom surface of the membrane has a circular shape having a first radius, and the hydrophilic area has a circular shape having a second radius, wherein the first radius is about 1.1 to about 10 times the second radius.

8. The chemical mechanical polishing machine of claim 1 , wherein the membrane comprises silicon.

9. The chemical mechanical polishing machine of claim 1 , wherein the hydrophobic area of the membrane comprises a hydrophobic polymer resin including one of a hydrocarbon radical (CH—) or a fluorocarbon radical (FC—).

10. The chemical mechanical polishing machine of claim 9 , wherein the hydrocarbon radical (CH—) comprises one of an alkyl group or a phenyl group.

11. The chemical mechanical polishing machine of claim 9 , wherein the hydrophobic polymer resin comprises one of dichloro-dimethylsilane (DDMS) or fluoro-octyl-trichloro-silane (FOTS).

12. The chemical mechanical polishing machine of claim 9 , wherein the hydrophobic polymer resin is configured to form a covalent binding with the membrane.

13. The chemical mechanical polishing machine of claim 1 , wherein the hydrophobic area has a thickness of about 1 to about 100 nm.

14. A polishing head assembly comprising:
a turntable having a substantially flat top surface and configured to rotate horizontally;
a polishing pad on the top surface of the turntable;
a polishing head body including a groove;
a membrane disposed in the groove and including a plurality of holes, wherein the membrane is configured to be in contact with a back surface of a wafer; and
a fixing ring disposed between an external side surface of the membrane and an internal side surface of the groove,
wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area.

15. The polishing head assembly of claim 14 , further comprising a plurality of gas pipes configured to be connected to the groove in the polishing head body, wherein the plurality of gas pipes and the plurality of holes are connected to one another.

16. The polishing head assembly of claim 14 , further comprising a plurality of gas pipes configured to be connected to the groove in the polishing head body, and wherein the bottom surface of the membrane comprises a plurality of hydrophilic areas and a plurality of hydrophobic areas disposed in a fan-like form.

17. The polishing head assembly of claim 16 , wherein the membrane further comprises a center region disposed at a center of the plurality of hydrophilic areas and the plurality of hydrophobic areas that are disposed in the fan-like form, and wherein the center region is hydrophobic.

18. The polishing head assembly of claim 16 , wherein the membrane further comprises a plurality of holes disposed in the hydrophilic areas, and wherein the plurality of gas pipes and the plurality of holes are connected to one another.

19. The polishing head assembly of claim 16 , wherein the membrane further comprises a center region disposed at a center of the plurality of hydrophilic areas and the plurality of hydrophobic areas that are disposed in the fan-like form and a plurality of holes disposed in the hydrophilic areas and wherein the plurality of gas pipes and the plurality of holes are connected to one another.

20. A chemical mechanical polishing machine, comprising:
a turntable having a substantially flat top surface and configured to rotate horizontally;
a polishing pad attached to and fixed on the top surface of the turntable;
a polishing head assembly configured to move a wafer disposed on a bottom surface thereof into contact with the polishing pad and polish the wafer;
a slurry supply device having at least one nozzle connected to an end portion thereof and configured to supply slurry on the polishing pad; and
a conditioner having a diamond disk at an end portion thereof and configured to condition a surface of the polishing pad,
wherein the polishing head assembly comprises:
a shaft configured to rotate as a central axis for polishing the wafer;
a polishing head body disposed at a bottom surface of the shaft, wherein the polishing head body includes a groove in a bottom surface thereof and a plurality of gas pipes passing through the polishing head body which are configured to be connected to the groove;
a membrane disposed in the groove, wherein the membrane is configured to be in contact with a back surface of a wafer, and wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area; and
a fixing ring having flexible properties and elastic properties and disposed between an external side surface of the membrane and an internal side surface of the groove in the polishing head body.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim In-Kwon
• Kim Kyung-Hyun
• Park Ki-Jong
• Bae Ki-Ho
• Lim Jong-Heun

Classifications

• B24B37/10

  for single side lapping · CPC title

• B24B37/32

  Retaining rings · CPC title

• B24B37/30 Primary

  for single side lapping of plane surfaces · CPC title

• B24B37/042

  operating processes therefor · CPC title

• B24B37/27

  Work carriers · CPC title