Capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate

Patent metadata

Field	Value
Publication number	US-9251999-B2
Application number	US-201213526391-A
Country	US
Kind code	B2
Filing date	Jun 18, 2012
Priority date	Dec 29, 2006
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.

First claim

What is claimed is:

1. A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate, comprising:
at least an upper electrode and a lower electrode for processing said substrate, said substrate being disposed on said lower electrode during plasma processing;
a generator for providing at least a first RF signal to said lower electrode, said first RF signal having a first RF frequency, said first RF signal coupling with a plasma in said plasma processing chamber, thereby inducing an induced RF signal on said upper electrode;
a rectifying arrangement for rectifying said induced RF signal to generate a rectified RF signal such that said rectified RF signal is more negatively biased than positively biased,
wherein said substrate is configured to be processed while said rectified RF signal is provided to said upper electrode.

2. The capacitively-coupled plasma processing system of claim 1 wherein said rectifying includes removing positive components of said induced RF signal.

3. The capacitively-coupled plasma processing system of claim 1 further comprising the generator providing a second RF signal to said lower electrode, said second RF signal having a second RF frequency different from said first RF signal.

4. The capacitively-coupled plasma processing system of claim 3 wherein said second RF frequency is one of 2 MHz, 27 MHz and 60 MHz.

5. The capacitively-coupled plasma processing system of claim 1 wherein said rectifying further including amplifying an amplitude of said induced RF signal to generate said rectified RF signal.

6. The capacitively-coupled plasma processing system of claim 1 wherein said capacitively-coupled plasma processing system represents a multi-frequency capacitively-coupled plasma processing system.

7. The capacitively-coupled plasma processing system of claim 1 wherein said rectifying said induced RF signal to generate said rectified RF signal is performed using said rectifying arrangement.

8. The capacitively-coupled plasma processing system of claim 7 wherein said rectifying arrangement includes a power MOSFET.

9. A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate, comprising:
at least an upper electrode and a lower electrode for processing said substrate, said substrate being disposed on said lower electrode during plasma processing;
a generator for providing a plurality of RF signals to said lower electrode, a first RF signal of said plurality of RF signals having a first RF frequency, said first RF signal coupling with a plasma in said plasma processing chamber, thereby inducing an induced RF signal on said upper electrode;
a rectifying arrangement coupled to said induced RF signal to generate a rectified RF signal such that said rectified RF signal is more negatively biased than positively biased; and
wherein said substrate is configured to be processed while said rectified RF signal is provided to said upper electrode.

10. The capacitively-coupled plasma processing system of claim 9 wherein said rectifying arrangement includes circuitry configured to remove positive components of said induced RF signal.

11. The capacitively-coupled plasma processing system of claim 9 wherein said rectifying arrangement further includes circuitry configured to amplify an amplitude of said induced RF signal to generate said rectified RF signal.

12. A plasma processing system for processing a substrate and having a plasma processing chamber, comprising:
an upper electrode;
a lower electrode, said substrate being disposed on said lower electrode during plasma processing;
a generator for providing at least a first RF signal to said lower electrode, said first RF signal having a first RF frequency, said first RF signal coupling with a plasma in said plasma processing chamber, thereby inducing an induced RF signal on said upper electrode; and
a rectifying arrangement for reducing or eliminating at least a positive cycle of said induced RF signal to generate a rectified RF signal such that said rectified RF signal is more negatively biased with respect to said plasma, wherein said substrate is processed while said rectified RF signal is provided to said upper electrode.

13. The plasma processing system of claim 12 further comprising the generator providing a second RF signal to said lower electrode, said second RF signal having a second RF frequency different from said first RF signal.

14. The plasma processing system of claim 13 wherein said second RF frequency is one of 2 MHz, 27 MHz and 60 MHz.

15. The plasma processing system of claim 12 further comprising an amplifier for amplifying an amplitude of said induced RF signal to generate said rectified RF signal.

16. The plasma processing system of claim 12 wherein said capacitively-coupled plasma processing system represents a multi-frequency capacitively-coupled plasma processing system.

17. The plasma processing system of claim 12 wherein said rectifying arrangement includes a power MOSFET.

18. The plasma processing system of claim 12 further comprising an amplifier for amplifying an amplitude of a negative portion of said induced RF signal to generate said rectified RF signal.

19. The plasma processing system of claim 12 wherein said rectifying arrangement includes a rectifier circuit.

20. The plasma processing system of claim 19 wherein said rectifier circuit includes an amplification circuit for amplifying an amplitude of a negative portion of said induced RF signal.

21. The plasma processing system of claim 19 wherein said rectifier circuit is coupled with said upper electrode.

22. The plasma processing system of claim 19 wherein said rectifier circuit is disposed outside said plasma processing chamber.

Assignees

• Dhindsa Rajinder
• Hudson Eric
• Marakhtanov Alexei
• Fischer Andreas
• Lam Res Corp

Inventors

• Dhindsa Rajinder
• Hudson Eric
• Marakhtanov Alexei
• Fischer Andreas

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• G03F7/427

  using plasma means only · CPC title

• H01J37/32165 Primary

  Plural frequencies · CPC title