Compositions and processes for immersion lithography

Patent metadata

Field	Value
Publication number	US-9244355-B2
Application number	US-97891007-A
Country	US
Kind code	B2
Filing date	Oct 30, 2007
Priority date	Oct 30, 2006
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

First claim

What is claimed is:

1. A method for processing a photoresist composition, comprising:
(a) applying on a substrate a photoresist composition comprising:
(i) one or more resins which comprise one or more photoacid-labile groups,
(ii) a photoactive component, and
(iii) one or more materials that comprise fluorinated photoacid-labile groups, where a fluorinated cleavage product is generated during exposure and post-exposure treatment, whereby the (iii) one or more materials migrate toward upper portions of the photoresist composition layer during the applying; and

(b) immersion exposing the applied photoresist composition to radiation activating for the photoresist composition,
wherein the fluorinated cleavage product is selected from the group consisting of:

in which R 2 is CH 2 , CH 2 CF 2 , CH 2 CF 2 CF 2 , CH 2 CF 2 CF 2 CF 2 , or CH(CF 3 ).

2. The method of claim 1 wherein the photoresist composition comprises one or more substantially non-mixable materials.

3. The method of claim 1 wherein the photoresist layer is exposed to radiation having a wavelength of 193 nm activating for the photoresist composition.

4. The method of claim 1 wherein the (iii) one or more materials have a lower surface energy and/or small hydrodynamic volume than the (i) one or more resins.

5. The method of claim 1 wherein the photoresist composition provides a decreased amount of acid or organic material to be detected in immersion fluid following the immersion exposure.

6. The method of claim 1 wherein the photoresist composition as applied as a spin-coated layer provides a receding water contact angle of in excess of 70 degrees.

7. A method for processing a photoresist composition, comprising:
(a) applying on a substrate a photoresist composition layer comprising:
(i) one or more resins which comprise one or more photoacid-labile groups,
(ii) a photoactive component, and
(iii) one or more materials that comprise fluorinated photoacid-labile groups, where a fluorinated cleavage product is generated during exposure and post-exposure treatment, wherein the (iii) one or more materials have a lower surface energy and/or small hydrodynamic volume than the (i) one or more resins; and

(b) immersion exposing the applied photoresist layer to radiation activating for the photoresist composition,
wherein the fluorinated cleavage product is selected from the group consisting of:

in which R 2 is CH 2 , CH 2 CF 2 , CH 2 CF 2 CF 2 , CH 2 CF 2 CF 2 CF 2 , or CH(CF 3 ).

8. The method of claim 1 wherein the (iii) one or more materials have a lower surface energy than the (i) one or more resins.

9. The method of claim 7 wherein the (iii) one or more materials have a lower surface energy than the (i) one or more resins.

10. The method of claim 7 wherein the photoresist composition as applied as a spin-coated layer provides a receding water contact angle of in excess of 70 degrees.

11. The method of claim 7 wherein the photoresist composition provides a decreased amount of acid or organic material to be detected in immersion fluid following the immersion exposure.

12. The method of claim 1 wherein the (iii) one or more materials that comprise fluorinated photoacid-labile groups are present in the photoresist composition in an amount of 0.1 to 20 weight percent based on total weight of the fluid photoresist composition.

13. The method of claim 1 wherein the (iii) one or more materials that comprise fluorinated photoacid-labile groups are present in the photoresist composition in an amount of up to 1 weight percent based on total solids of the photoresist composition.

14. The method of claim 1 wherein the (iii) one or more materials that comprise fluorinated photoacid-labile groups are present in the photoresist composition in an amount of up to 2 weight percent based on total solids of the photoresist composition.

15. The method of claim 1 wherein the (iii) one or more materials that comprise fluorinated photoacid-labile groups are present in the photoresist composition in an amount of up to 3 weight percent based on total solids of the photoresist composition.

Assignees

• Caporale Stefan J
• Barclay George G
• Wang Deyan
• Jia Li
• Rohm & Haas Elect Mat

Inventors

• Caporale Stefan J
• Barclay George G
• Wang Deyan
• Jia Li

Classifications

• G03F7/2041 Primary

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/0046 Primary

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• G03F7/0382

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title