Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same

Patent metadata

Field	Value
Publication number	US-9244344-B2
Application number	US-201213614872-A
Country	US
Kind code	B2
Filing date	Sep 13, 2012
Priority date	Sep 22, 2011
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

An actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin (P) having a repeating unit (a) represented by following General Formula (I), a compound (B) generating organic acid by irradiation of actinic ray or radiation, and 1% by mass or more of a resin (C) which has at least one of a fluorine atom and a silicon atom and is different from the resin (P) with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition,

wherein, in General Formula (I), R 0 represents a hydrogen atom or a methyl group, and each of R 1 , R 2 , and R 3 independently represents a straight chain or branched alkyl group.

First claim

What is claimed is:

1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
a resin (P) having a repeating unit (a) represented by a following General Formula (I),
a compound (B) generating organic acid by irradiation of actinic ray or radiation, and
1% by mass or more of a resin (C) which has at least one of a fluorine atom and a silicon atom and is different from the resin (P) with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition,
wherein the resin (P) is a resin containing 45 mol % or more of the repeating unit (a) with regard to all repeating units in the resin (P);

in Formula (I), R 0 represents a hydrogen atom or a methyl group, and each of R 1 , R 2 , and R 3 independently represents a straight chain or branched alkyl group.

2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the straight chain or branched alkyl group of R 1 , R 2 , and R 3 is an alkyl group having 1 to 4 carbon atoms.

3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the compound (B) is a compound generating organic acid represented by following Formula (II) or (III),

wherein, in the above Formulae, each of Xfs independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom, each of R 1 and R 2 independently represents a hydrogen atom, a fluorine atom, or an alkyl group, and in case of y≧2, each of R 1 's and R 2 's independently represents a hydrogen atom, a fluorine atom, or an alkyl group, L represents a divalent linking group, and in case of z≧2, a plurality of L's may be the same as or different from each other, Cy represents a cyclic organic group, Rf is a group including a fluorine atom, x represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10.

4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the content of the resin (C) is 1 to 10% by mass with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition.

5. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the content of the resin (C) is 3 to 10% by mass with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition.

6. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the resin (C) contains 25 mol % or less of a repeating unit having a group (z) decomposed by the action of an acid with regard to all repeating units in the resin (C).

7. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the resin (C) does not have a repeating unit having a group (z) decomposed by the action of an acid.

8. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , further comprising:
a basic compound or an ammonium salt compound (N) of which basicity is decreased by irradiation of actinic ray or radiation.

9. A resist film which is formed of the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 .

10. A pattern forming method comprising:
forming a film of the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
exposing the film with actinic rays or radiation, and
developing the film after the exposure using a developer including an organic solvent to form a negative-type pattern.

11. The pattern forming method according to claim 10 ,
wherein the content of the organic solvent in the developer including an organic solvent is greater than or equal to 90% by mass and less than or equal to 100% by mass with regard to the total amount of the developer.

12. The pattern forming method according to claim 10 ,
wherein the developer is a developer including at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents.

13. The pattern forming method according to claim 10 , further comprising:
cleaning using a rinsing solution containing an organic solvent.

14. An electronic device manufacturing method comprising:
the pattern forming method according to claim 10 .

15. An electronic device which is manufactured by the electronic device manufacturing method according to claim 14 .

16. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , further comprising:
a nitrogen-containing organic compound having a group detached by the action of acid represented by the following Formula (F);

in Formula (F), R a represents a hydrogen atom, and alkyl group, acycloalkyl group, an aryl group, or an aralkyl group, when n=2, the two R a s may be the same as or different from each other, and two of R a may be bonded to each other and form a divalent heterocyclic hydrocarbon group or a derivative thereof,
R b s each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, and, in C(R b )(R b )(R b ), when one or more of R b is a hydrogen atom, at least one of the rest R b is a cyclopropyl group or an alkoxyalkyl group,
n represents an integer of 0 to 2,
m represents an integer of 1 to 3, and
n+m=3.

17. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
a resin (P) having a repeating unit (a) represented by a following Formula (I),
a compound (B) generating organic acid by irradiation of actinic ray or radiation, and
1% by mass or more of a resin (C) which has at least one of a fluorine atom and a silicon atom and is different from the resin (P) with regard to total solids of the actinic ray-sensitive or radiation-sensitive resin composition,
wherein the compound (B) is a compound (ZI-1) in which all of R 201 to R 203 of the following Formulae (ZI) are aryl groups, or one or two of R 201 to R 203 of the Formulae (ZI) are aryl groups and the remainder are independently alkyl group(s) or cycloalkyl group(s);

in Formula (I), R 0 represents a hydrogen atom or a methyl group, and each of R 1 , R 2 , and R 3 independently represents a straight chain or branched alkyl group,

in Formula (ZI),
the aryl group, the alkyl group, and the cycloalkyl group of R 201 to R 203 may have no substituents, or may have an aryl group, a halogen atom, a hydroxyl group, or a phenylthio group as a substituent,
two of R 201 to R 203 may be bonded and form a ring structure, and may include an oxygen atom, a sulfur atom, an ester bond, an amide bond or a carbonyl group in the ring,
Z − represents a sulfonate anion.

18. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 17 ,
wherein R 201 , R 202 , and R 203 in Formula (ZI) have no substituents.

19. The

Assignees

• Koshijima Kosuke
• Takahashi Hidenori
• Yamaguchi Shuhei
• Yamamoto Kei
• Fujifilm Corp

Inventors

• Koshijima Kosuke
• Takahashi Hidenori
• Yamaguchi Shuhei
• Yamamoto Kei

Classifications

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/2041

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0392 Primary

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title