FinFET with metal gate stressor

Patent metadata

Field	Value
Publication number	US-9240484-B2
Application number	US-201514703517-A
Country	US
Kind code	B2
Filing date	May 4, 2015
Priority date	Mar 20, 2012
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A gate stressor for a fin field effect transistor (FinFET) device is provided. The gate stressor includes a floor, a first stressor sidewall, and a second stressor sidewall. The floor is formed on a first portion of a gate layer. The gate layer is disposed above a shallow trench isolation (STI) region. The first stressor sidewall formed on a second portion of the gate layer. The second portion of the gate layer is disposed on sidewalls of a fin. The second stressor sidewall formed on the third portion of the gate layer. The third portion of the gate layer is disposed on sidewalls of a structure spaced apart from the fin. The first stressor side wall and the second stressor sidewall do not exceed a height of the fin.

First claim

What is claimed is:

1. A fin field effect transistor (FinFET) device, comprising:
a first fin;
a structure spaced apart from the first fin by a first shallow trench isolation (STI) region;
a gate layer formed over the structure, the first STI region, and a channel of the first fin; and
a gate stressor over a first portion of the gate layer disposed on the first STI region between the structure and the first fin and over a second portion of the gate layer disposed on sidewalls of the first fin and sidewalls of the structure, an uppermost surface of the gate stressor being lower than an uppermost surface of the first fin.

2. The FinFET of claim 1 , wherein the gate stressor comprises metal.

3. The FinFET of claim 1 , wherein the gate stressor is configured to stress the channel of the first fin.

4. The FinFET of claim 1 , wherein the gate stressor is configured to put the channel of the first fin in tension.

5. The FinFET of claim 1 , wherein the gate stressor is configured to put the channel of the first fin in compression.

6. The FinFET of claim 1 , wherein the gate stressor includes vertically-oriented sidewalls between a horizontally-oriented floor.

7. The FinFET of claim 1 , wherein the structure is one of a second fin and an interlevel dielectric.

8. The FinFET of claim 1 , wherein the structure is an interlevel dielectric, and further comprising a second fin spaced apart from the fin by a second STI region, the second fin on an opposite side of the first fin relative to the structure, and wherein a second gate stressor is formed between the first fin and the second fin.

9. A fin field effect transistor (FinFET) device comprising:
a first fin;
a shallow trench isolation (STI) region along opposing sides of the first fin, the first fin extending through and above the STI region;
a gate layer over the STI region and the first fin, the gate layer comprising a sidewall portion extending along a sidewall of the first fin;
a gate stressor over the gate layer that is over the STI region, the gate stressor having a non-planar upper surface, the gate stressor extending along the sidewall portion of the gate layer, and the non-planar upper surface of the gate stressor being lower than an uppermost surface of the first fin; and
a metal layer over the gate stressor, the metal layer being in direct contact with the gate layer over an upper surface of the first fin.

10. The FinFET of claim 9 , wherein the metal layer comprises a metal work function layer over the gate layer.

11. The FinFET of claim 9 , further comprising a second fin, the STI region being interposed between the first fin and the second fin, wherein the gate layer extends over the second fin, and wherein the gate stressor extends from the first fin over the STI region and along a sidewall of the gate layer over the second fin.

12. The FinFET of claim 9 , wherein the gate stressor has a non-planar upper surface.

13. A fin field effect transistor (FinFET) device comprising:
a first fin;
a shallow trench isolation (STI) region along opposing sides of the first fin, the first fin extending through the STI region;
a gate layer over the STI region and the first fin;
a metal layer over the gate layer, the metal layer being in direct contact with the gate layer over an upper surface of the first fin; and
a gate stressor interposed between the metal layer and the gate layer over the STI region, wherein an uppermost surface of the gate stressor is lower than an uppermost surface of the first fin.

14. The FinFET of claim 13 , further comprising a second fin, the STI region being interposed between the first fin and the second fin, wherein the gate layer extends over the second fin, and wherein the gate stressor extends from the first fin over the STI region and along a sidewall of the gate layer over the second fin.

15. The FinFET of claim 13 , further comprising an interlayer dielectric, wherein the gate layer extends over a sidewall of the interlayer dielectric, and wherein the gate stressor extends over the gate layer that extends over a sidewall of the interlayer dielectric.

16. The FinFET of claim 13 , wherein the metal layer comprises a work function metal layer and an overlying metal layer.

17. The FinFET of claim 13 , wherein the gate stressor has a non-planar upper surface.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Kelly Andrew Joseph
• Okuno Yasutoshi
• Chien Pei-Shan
• Tseng Wei-Hsiung

Classifications

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title

• H10D30/794 Primary

  comprising conductive materials, e.g. silicided source, drain or gate electrodes · CPC title

• H10D84/834

  comprising FinFETs · CPC title