Method for manufacturing a silicon carbide semiconductor element
US-2015380248-A1 · Dec 31, 2015 · US
US9240359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9240359-B2 |
| Application number | US-201414326442-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 8, 2014 |
| Priority date | Jul 8, 2013 |
| Publication date | Jan 19, 2016 |
| Grant date | Jan 19, 2016 |
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Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer, collecting a return reflected optical signal reflected from the photoresist layer, and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer.
Opening claim text (preview).
The invention claimed is: 1. A method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate, comprising: performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process; directing an op…
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