Resist underlayer film-forming composition for EUV lithography containing condensation polymer

Patent metadata

Field	Value
Publication number	US-9240327-B2
Application number	US-201214236719-A
Country	US
Kind code	B2
Filing date	Jul 31, 2012
Priority date	Aug 4, 2011
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1):

[where each of A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 is a hydrogen atom, a methyl group, or an ethyl group; X 1 is formula (2), formula (3), formula (4), or formula (0):

Q is formula (5) or formula (6):

and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

First claim

The invention claimed is:

1. A resist underlayer film for EUV lithography obtained by a method comprising:
applying a resist underlayer film-forming composition for EUV lithography comprising a polymer having a repeating unit structure of formula, (1):

wherein each of A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 is a hydrogen atom, a methyl group, or an ethyl group; and
X 1 is formula (2), formula (3), formula (4) or formula (0):

wherein each of R 1 and R 2 is a hydrogen atom, a halogen atom, a C 1-6 alkyl group, a C 3-6 alkenyl group, a benzyl group, or a phenyl group,
wherein each of the C 1-6 alkyl group, the C 3-6 alkenyl group, the benzyl group, and the phenyl group is optionally substituted with a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group, a cyano group, a hydroxy group, a carboxy group, and a C 1-6 alkylthio group;

R 1 and R 2 are optionally mutually bonded to form a ring of 3 to 6 carbon atoms;
R 3 is a halogen atom , a C 1-6 alkyl group, a C 3-6 alkenyl group, a benzyl group, or a phenyl group,
wherein the phenyl group is optionally substituted with a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group, a cyano group, a hydroxyl group, and a C 1-6 alkylithio group; and

Q is formula (5) or formula (6):

wherein Q 1 is a C 1-10 alkylene group, a phenylene group, a naphthylene group, or an anthrylene group, where each of the alkylene group,the phenylene group, the naphthylene group, and the anthrylene group is optionally substituted with a C 1-6 alkyl group, a C 2-7 carbonyloxyalkyl group, a halogen atom, a C 1-6 alkoxy group, a phenyl group, a nitro group, a cyano group, a hydroxy group, a C 1-6 alkylthio group, a group having a disulfide group, a carboxy group, or a group of a combination of a C 1-6 alkyl group, a C 2-7 carbonyloxyalkyl group, a halogen atom, a C 1-6 alkoxy group, a phenyl group, a nitro group, a cyano group, a hydroxy group, a C 1-6 alkylthio group, a group having a disulfide group, and a carboxy group;
each of n 1 and n 2 is the number of 0 or 1; and
X 2 is formula (2), formula (3), or formula (0); and

a solvent

onto a semiconductor substrate, and
baking the applied resist underlayer film-forming composition, wherein
a film thickness of the resist underlayer film is 1 nm to 20 nm.

2. A method for forming an EUV resist pattern used for manufacturing a semiconductor device, the method comprising:
forming a resist underlayer film for EUV lithography by applying a resist underlayer film-forming composition for EUV lithography comprising a polymer having a repeating unit structure of formula (1):

wherein each of A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 is a hydrogen atom, a methyl group, or an ethyl group; and
X 1 is formula (2), formula (3), formula (4) or formula (0):

wherein each of R 1 and R 2 is a hydrogen atom, a halogen atom, a C 1-6 alkyl group, a C 3-6 alkenyl group, a benzyl group, or a phenyl group,
wherein each of the C 1-6 alkyl group, the C 3-6 alkenyl group, the benzyl group, and the phenyl group is optionally substituted with a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group, a cyano group, a hydroxy group, a carboxy group, and a C 1-6 alkylthio group;

R 1 and R 2 , are optionally mutually bonded to form a ring of 3 to 6 carbon atoms;
R 3 is a halogen atom, a C 1-6 alkyl group, a C 3-6 alkenyl group, a benzyl group, or a phenyl group,
wherein the phenyl group is optionally substituted with a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group, a cyano group, a hydroxy group, and a C 1-6 alkylthio group; and

Q is formula (5) or formula (6):

wherein Q 1 is a C 1-10 alkylene group, a phenylene group, a naphthylene group, or an anthrylene group, where each of the alkylene group, the phenylene group, the naphthylene group, and the anthrylene group is optionally substituted with a C 1-6 alkyl group, a C 2-7 carbonyloxyalkyl group, a halogen atom, a C 1-6 alkoxy group, a phenyl group, a nitro group, a cyano group, a hydroxy group a C 1-6 alkylthio group, a group having a disulfide group, a carboxy group, or a group of a combination of a C 1-6 alkyl group, a C 2-7 carbonyloxyalkyl group, a halogen atom, a C 1-6 alkoxy group, a phenyl group, a nitro group, a cyano group, a hydroxy group, a C 1-6 alkylthio group, a group having a disulfide group, and a carboxy group;
each of n 1 and n 2 is the number of 0 or 1; and
X 2 is formula (2), formula (3), or formula (0); and

a solvent onto a semiconductor substrate, and baking the applied resist underlayer film-forming composition;

forming an EUV resist layer on the resist underlayer film for EUV lithography;
exposing the semiconductor substrate coated with the resist underlayer film for EUV lithography and the EUV resist layer to light; and
developing the EUV resist layer after the exposing, wherein
a film thickness of the resist underlayer film is 1 nm to 20 nm.

3. The resist underlayer film for EUV lithography according to claim 1 , wherein the resist underlayer film-forming composition further comprises:
a crosslinkable compound.

4. The resist underlayer film for EUV lithography according to claim 1 , wherein the resist underlayer film-forming composition further comprises:
a crosslinkable compound; and
an acid compound.

5. The resist underlayer film for EUV lithography according to claim 1 , wherein
the polymer having the repeating unit structure of formula (1) is a polymer produced by a reaction of a compound of formula (7) with a compound of formula (8):

wherein in formula (7), X 1 is the same as X 1 defined in claim 1 ; and
in formula (8), Q, A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 are the same as Q, A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 defined in claim 1 , respectively.

6. The resist underlayer film for EUV lithography according to claim 1 , wherein
the polymer having the repeating unit structure of formula (1) is a polymer produced by a reaction of a compound of formula (9) with a compound of formula (10):

wherein in formula (9), X 1 , A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 are the same as X 1 , A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 defined in claim 1 , respectively;
in formula (10), Q is the

Assignees

• Sakamoto Rikimaru
• Fujitani Noriaki
• Endo Takafumi
• Ohnishi Ryuji
• Ho Bangching
• Nissan Chemical Ind Ltd

Inventors

• Sakamoto Rikimaru
• Fujitani Noriaki
• Endo Takafumi
• Ohnishi Ryuji
• Ho Bangching

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• C08G73/0633

  with only two nitrogen atoms in the ring · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title