Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-9240307-B2
Application number	US-201414161893-A
Country	US
Kind code	B2
Filing date	Jan 23, 2014
Priority date	Jan 24, 2013
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.

First claim

What is claimed is:

1. A plasma processing apparatus comprising:
a processing container;
a mounting table provided within the processing container and including a lower electrode;
a shower head provided above the mounting table and constituting an upper electrode; and
a gas inlet tube provided above the shower head and connected to the shower head,
wherein the shower head is formed with a plurality of gas ejection holes which are opened downwardly, and provided with a first gas diffusion chamber and a second gas diffusion chamber on the plurality of gas ejection holes, the first gas diffusion chamber and the second gas diffusion chamber being separated from each other,
the first gas diffusion chamber extends along a central axis that passes through a center of the mounting table,
the second gas diffusion chamber extends in a circumferential direction with respect to the central axis at least around the first gas diffusion chamber, and
the gas inlet tube includes a cylindrical first tube wall provided along the central axis and a cylindrical second tube wall provided outside the first tube wall, the gas inlet tube defining a first gas inlet path configured to introduce a gas into the first gas diffusion chamber, inside the first tube wall, and a second gas inlet path configured to introduce a gas into the second gas diffusion chamber, between the first tube wall and the second tube wall.

2. The plasma processing apparatus of claim 1 , wherein the shower head includes:
a shower plate formed with the plurality of gas ejection holes,
a first wall having a cylindrical shape that extends in a direction where the central axis extends, the first wall being provided on the shower plate and defining the first gas diffusion chamber,
a second wall having a cylindrical shape that extends in the direction where the central axis extends, the second wall being provided on the shower plate and around the first wall and defining the second gas diffusion chamber together with the first wall, and
a gas distribution unit provided on the first wall and the second wall,
wherein the gas distribution unit is provided with a plurality of gas flow paths that extend in a radial direction with respect to the central axis from a position below the second gas inlet path to a position above the second gas diffusion chamber.

3. The plasma processing apparatus of claim 2 , wherein the gas distribution unit includes:
a first layer including a top surface and a bottom surface joined to a top portion of the first wall and a top portion of the second wall, respectively, and
a second layer provided on the top surface of the first layer,
wherein a plurality of grooves that extend in the radial direction with respect to the central axis from a position below the second gas inlet path to a position above the second gas diffusion chamber are formed on the top surface of the first layer, the plurality of grooves constituting the plurality of gas flow paths, and
the first layer is formed with a plurality of through holes that penetrate the first layer above the second gas diffusion chamber to interconnect the plurality of gas flow paths and the second gas diffusion chamber.

4. The plasma processing apparatus of claim 1 , wherein the shower head includes:
a shower plate formed with the plurality of gas ejection holes,
a first wall having a cylindrical shape that extends in a direction where the central axis extends, the first wall being provided on the shower plate,
a second wall having a cylindrical shape that extends in the direction where the central axis extends, the second wall being provided on the shower plate and around the first wall,
a first upper wall provided on the first wall to face the shower plate, and
a second upper wall provided on the second wall to face the shower plate at a position above the first upper wall,
wherein the first gas diffusion chamber is formed inside the first wall and below the first upper wall,
the second gas diffusion chamber is formed between the first wall and the second wall and between the first upper wall and the second upper wall,
the first tube wall includes a lower end portion that adjoins the first gas diffusion chamber, the lower end portion of the first tube wall being formed with a plurality of first holes that communicate the first gas inlet path and the first gas diffusion chamber with each other, and
the second tube wall includes a lower end portion that adjoins the second gas diffusion chamber between the first upper wall and the second upper wall, the lower end portion of the second tube wall being formed with a plurality of second holes that communicate the second gas inlet path and the second gas diffusion chamber with each other.

5. The plasma processing apparatus of claim 4 , wherein the plurality of first holes and the plurality of second holes extend in the radial direction with respect to the central axis,
the plurality of first holes are equally arranged in the circumferential direction with respect to the central axis, and
the plurality of second holes are equally arranged in the circumferential direction with respect to the central axis.

6. The plasma processing apparatus of claim 1 , wherein the shower head further includes a third gas diffusion chamber provided on the plurality of gas ejection holes that are opened downwardly,
wherein the third gas diffusion chamber extends in the circumferential direction with respect to the central axis at least around the second gas diffusion chamber, and
the gas inlet tube further includes a cylindrical third tube wall provided outside the second tube wall and defines a third gas inlet path configured to introduce a gas into the third gas diffusion chamber, between the second tube wall and the third tube wall.

Assignees

• Tokyo Electron Ltd

Inventors

• Amikura Norihiko
• Miyoshi Risako

Classifications

• H01J37/3244 Primary

  Gas supply means · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title