Illumination system of a microlithographic projection exposure apparatus
US-9213244-B2 · Dec 15, 2015 · US
US9235134B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9235134-B2 |
| Application number | US-85731610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2010 |
| Priority date | Aug 16, 2010 |
| Publication date | Jan 12, 2016 |
| Grant date | Jan 12, 2016 |
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Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
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What is claimed is: 1. A photolithographic apparatus, comprising an optical path configured to: provide a first diffraction pattern to a portion of an optical system, wherein the first diffraction pattern is configured to expose a semiconductor article and induce a thermal gradient in the portion; provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern, wherein the semiconductor article is not exposed to the second diffraction pattern and the second diffraction pattern is configured to reduce the thermal gradient in the portion, and wherein the optical path comprises an illumination source that includes a micro-electromechanical micro-mirror array that is configurable to provide, in conjunction with a reticle, both the first diffraction pattern and the second diffraction pattern. 2. The apparatus of claim 1 , wherein the optical path comprises an illumination source, and an optical shaping and conditioning (OSC) unit comprising a first diffractive optical element and a second diffractive optical element, wherein the first diffraction pattern is provided by the first diffractive optical element in conjunction with a reticle, and the second diffraction pattern is provided by a second diffractive optical element in conjunction with the reticle. 3. The apparatus of claim 1 , comprising a processing unit configured to provide configuration instructions to the illumination source. 4. The apparatus of claim 1 , wherein the optical path comprises a beam interrupter between the optical system and the semiconductor article configurable to an open state and a closed state to interrupt illumination radiation between the optical system and the semiconductor article. 5. The apparatus of claim 4 , comprising a translation stage configured to retain the semiconductor article, wherein the semiconductor article is exposed to the illumination radiation when the beam interrupter is configured in the open state. 6. The apparatus of claim 1 , wherein the first diffraction pattern and the second diffraction pattern include at least one of a dipole pattern, an annular illumination pattern and a four-pole illumination pattern. 7. A method, comprising: providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern, wherein providing the first diffraction pattern comprises configuring a micro-electromechanical array of micro-mirrors in a first configuration, the first diffraction pattern configured to induce an optical aberration from a thermal gradient in the optical system; and providing a second diffraction pattern onto the portion of the optical system, wherein providing the second diffraction pattern comprises configuring the micro-electromechanical array of micro-mirrors in a second configuration, the second diffraction pattern configured to reduce the thermal gradient in the optical system, wherein the semiconductor article is not exposed to the second diffraction pattern. 8. The method of claim 7 , wherein providing the first diffraction pattern comprises moving a first diffractive optical element into optical alignment with an optical axis of the optical system, and wherein providing the second diffraction pattern comprises moving a second diffractive optical element into optical alignment with the optical axis of the optical system. 9. The method of claim 7 , wherein providing the first diffraction pattern comprises using an illumination source in a first illumination mode, and wherein providing the second diffraction pattern comprises using the illumination source in a second illumination mode. 10. The method of claim 7 , wherein providing the first diffraction pattern comprises providing the first diffraction pattern for a first time, and wherein providing the second diffraction pattern comprises providing the second diffraction pattern for a second time that is different from the first time. 11. The method of claim 7 , wherein providing the first diffraction pattern comprises providing a first illumination dipole and wherein providing the second diffraction pattern comprises providing a second illumination dipole. 12. The method of claim 7 , wherein providing the first diffraction pattern comprises providing a first annular illumination pattern and wherein providing the second diffraction pattern comprises providing a second annular illumination pattern. 13. The method of claim 7 , wherein providing the first diffraction pattern comprises providing a first four-pole illumination pattern and wherein providing the second diffraction pattern comprises providing a second four-pole illumination pattern. 14. A method, comprising: providing a first diffraction pattern onto a portion of an optical system, wherein providing the first diffraction pattern generates spaced-apart first thermally-affected zones causing a thermal gradient in the portion, wherein providing the first diffraction pattern comprises configuring a micro-electromechanical micro-mirror array illumination source to provide, in conjunction with a reticle, the first diffraction pattern; and after providing the first diffraction pattern, providing a second diffraction pattern onto the portion, wherein providing the second diffraction pattern generates second thermally-affected zones in the portion reducing the thermal gradient, wherein providing the second diffraction pattern comprises configuring the micro-electromechanical micro-mirror illumination source to provide, in conjunction with the reticle, the second diffraction pattern; wherein the first thermally-affected zones induce at least one optical aberration in the portion, and wherein the second thermally-affected zones reduce the at least one optical aberration. 15. The method of claim 14 , wherein providing the first diffraction pattern onto the portion comprises providing illumination radiation through a first diffractive optical element, and wherein providing the second diffraction pattern onto the portion comprises providing illumination radiation through a second diffractive optical element. 16. The method of claim 14 , wherein providing the first diffraction pattern comprises moving a first diffractive optical element into optical alignment with the optical system, and providing the second diffraction pattern comprises moving a second diffractive element into optical alignment with the optical system. 17. The method of claim 14 , wherein providing the first diffraction pattern alters a first average temperature of the first thermally-affected zones, and providing the second diffraction pattern alters a second average temperature of the second thermally-affected zones. 18. The method of claim 17 , wherein the second average temperature is approximately equal to the first average temperature. 19. The method of claim 14 , wherein the second thermally-affected zones are not adjacent to the first thermally-affected zones. 20. The method of claim 14 , wherein the second thermally-affected zones are substantially adjacent to the first thermally-affected zones. 21. The method of claim 14 , further comprising: interrupting illumination radiation between the optical system and a semiconductor article; and providing the second diffraction pattern to the portion of the optical system after providing the first diffraction pattern when the illumination radiation between the optical system and the semiconductor article is interrupted.
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