Three dimensional semiconductor device having lateral channel
US-2015372057-A1 · Dec 24, 2015 · US
Post-fabrication self-aligned initialization of integrated devices
US9196829B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196829-B2 |
| Application number | US-201313833139-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2013 |
| Priority date | Aug 31, 2010 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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Abstract
Official abstract text for this publication.
Defining an active region of a phase change memory (PCM) cell including depositing a first layer of material having a first chemical composition. A second layer of material having a second chemical composition is deposited on top of the first layer of material. An electrical current pulse is applied to locally heat a region of the first layer of material and the second layer of material to cause at least one of an inter-diffusion and a liquid mixing of the first layer of material and the second layer of material. This results in in the PCM cell containing a self-aligned region that includes a phase change material that is a mixture of the first chemical composition and the second chemical composition.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of defining an active region of a phase change memory (PCM) cell comprising: depositing a first layer of material having a first chemical composition, the depositing on top of a first conductive electrode region that forms a bit line and on top of a second conductive electrode region that includes a u-trench; depositing a second layer of material having a second chemical composition on top of the first layer of material; depositing a resist laye…
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Classifications
- H01L45/126Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9196829B2 cover?
- Defining an active region of a phase change memory (PCM) cell including depositing a first layer of material having a first chemical composition. A second layer of material having a second chemical composition is deposited on top of the first layer of material. An electrical current pulse is applied to locally heat a region of the first layer of material and the second layer of material to caus…
- Who is the assignee on this patent?
- IBM, Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/126. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).