Nonvolatile memory device and method for manufacturing same
US-9224788-B2 · Dec 29, 2015 · US
US9196830B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196830-B2 |
| Application number | US-201514624581-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 18, 2015 |
| Priority date | Oct 30, 2012 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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A device is disclosed. The device includes a top electrode, a bottom electrode and a storage element between the top and bottom electrodes. The storage element includes a heat generating element disposed on the bottom electrode, a phase change element wrapping around an upper portion of the heat generating element, and a dielectric liner sandwiched between the phase change element and the heat generating element.
Opening claim text (preview).
What is claimed is: 1. A method of forming a device comprising: providing a bottom electrode; forming a storage element over the bottom electrode, wherein the storage element comprises a heat generating element directly disposed on the bottom electrode, a phase change stack which comprises at least a phase change layer and a dielectric liner, wherein the phase change layer wraps around an upper portion of the heat generating element and the dielectric liner wraps around the s…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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