Variable resistance element
US-2015109093-A1 · Apr 23, 2015 · US
Resistive memory and fabricating method thereof
US9196828B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196828-B2 |
| Application number | US-201313849422-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2013 |
| Priority date | Jun 25, 2012 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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Abstract
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A resistive memory and a fabricating method thereof are provided. The resistive memory includes first and second electrodes, a variable resistance material layer, a first dielectric layer, and a second dielectric layer. The first electrode includes a first portion and a second portion. The second electrode is disposed opposite to the first electrode. The variable resistance material layer includes a sidewall and first and second surfaces opposite to each other, wherein the first surface is connected with the first portion of the first electrode and the second surface is electrically connected with the second electrode. The second portion surrounds the sidewall of the variable resistance material layer and is connected with the first portion. The first dielectric layer is disposed between the first and the second electrodes. The second dielectric layer is disposed between the variable resistance material layer and the second portion of the first electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A resistive memory, comprising: a first electrode having a first portion and a second portion; a second electrode disposed opposite to the first electrode; a variable resistance material layer having a sidewall, a first surface, and a second surface opposite to the first surface, wherein the first surface of the variable resistance material layer is connected with the first portion of the first electrode, the second surface of the variable resistance ma…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9196828B2 cover?
- A resistive memory and a fabricating method thereof are provided. The resistive memory includes first and second electrodes, a variable resistance material layer, a first dielectric layer, and a second dielectric layer. The first electrode includes a first portion and a second portion. The second electrode is disposed opposite to the first electrode. The variable resistance material layer inclu…
- Who is the assignee on this patent?
- Macronix Int Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1253. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).