Integrated circuits with stressed semiconductor-on-insulator (SOI) body contacts and methods for fabricating the same

Patent metadata

Field	Value
Publication number	US-9196544-B2
Application number	US-201414213288-A
Country	US
Kind code	B2
Filing date	Mar 14, 2014
Priority date	Mar 14, 2014
Publication date	Nov 24, 2015
Grant date	Nov 24, 2015

Abstract

Integrated circuits with selectively stressed semiconductor-on-insulator (SOI) body contacts and methods for fabricating integrated circuits with selectively stressed SOI body contacts are provided. An exemplary method for fabricating an integrated circuit includes forming a channel region and a body contact overlying and/or in an SOI substrate. Further, the method includes selectively applying a first stress to the source/drain region in a longitudinal direction. Also, the method includes selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction.

First claim

What is claimed is:

1. A method for fabricating an integrated circuit, the method comprising:
forming a channel region in a device area of a semiconductor-on-insulator (SOI) substrate;
forming a body contact in a body contact area of a semiconductor-on-insulator (SOI) substrate, wherein the channel region and the body contact form a transistor device;
forming a first stress film over the device area and selectively applying a first stress to the channel region in a longitudinal direction; and
forming a second stress film over the body contact area and selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction.

2. The method of claim 1 wherein selectively applying a first stress to the channel region in a longitudinal direction comprises selectively applying a first stress to the channel region in a longitudinal direction perpendicular to the lateral direction after selectively applying a second stress to the body contact in the lateral direction.

3. The method of claim 1 wherein selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises selectively applying a second stress opposite the first stress to the body contact in a lateral direction perpendicular to the longitudinal direction.

4. The method of claim 3 wherein:
forming a channel region comprises forming a PMOS channel region and forming a body contact comprises forming a PMOS body contact;
forming a first stress film over the device area and selectively applying a first stress to the channel region in a longitudinal direction comprises selectively applying a compressive stress to the PMOS channel region in a longitudinal direction; and
forming a second stress film over the body contact area and selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises selective applying a tensile stress to the PMOS body contact in a lateral direction.

5. The method of claim 1 wherein:
selectively applying a first stress to the channel region in a longitudinal direction comprises selectively applying a compressive stress to the channel region in a longitudinal direction; and
selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises selectively applying a tensile stress to the body contact in a lateral direction perpendicular to the longitudinal direction.

6. The method of claim 5 wherein:
forming a first stress film over the device area and selectively applying a compressive stress to the channel region in a longitudinal direction comprises depositing a compressive stress film over the device area; and
forming a second stress film over the body contact area and selectively applying a tensile stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises depositing a tensile stress film over the body contact area.

7. The method of claim 6 wherein:
selectively applying a compressive stress to the channel region in a longitudinal direction further comprises removing the compressive stress film from the device area; and
selectively applying a tensile stress to the body contact in a lateral direction perpendicular to the longitudinal direction further comprises removing the tensile stress film from the body contact area before forming the body contact in the body contact area.

8. The method of claim 1 wherein forming a first stress film over the device area and selectively applying a first stress to the channel region in a longitudinal direction and forming a second stress film over the body contact area and selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises:
memorizing the first stress in the device area and the second stress in the body contact area; and
removing the first stress film from the device area and removing the second stress film from the body contact area;
wherein forming the channel region in the device area comprises forming the channel region in the device area after removing the first stress film; and
wherein forming the body contact in the body contact area comprises forming the body contact in the body contact area after removing the second stress film.

9. The method of claim 1 wherein selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction, wherein the second stress is a same type as the first stress.

10. The method of claim 1 wherein selectively applying a second stress to the body contact in a lateral direction perpendicular to the longitudinal direction comprises selectively applying a second stress to the body contact in a lateral direction coplanar with the longitudinal direction and with a surface of the SOI substrate.

11. A method for fabricating an integrated circuit comprising:
providing a semiconductor substrate:
forming a first transistor device over the semiconductor substrate including a first channel region and a first body contact; and
forming a second transistor device over the semiconductor substrate including a second channel region and a second body contact;
stressing the first channel region, the first body contact, and the second body contact with a first-type stress; and
stressing the second channel region with a second-type stress.

12. The method of claim 11 wherein:
stressing the first channel region, the first body contact, and the second body contact with a first-type stress comprises stressing the first channel region in longitudinal direction, stressing the first body contact in a lateral direction, and stressing the second body contact in the lateral direction; and
stressing the second channel region with a second-type stress comprises stressing the second channel region in the longitudinal direction.

13. The method of claim 12 wherein stressing the first body contact and stressing the second body contact comprises stressing the first body contact and the second body contact in the lateral direction, wherein the lateral direction is coplanar with the longitudinal direction and with a surface of the semiconductor substrate.

14. The method of claim 11 wherein stressing the first channel region, the first body contact, and the second body contact with a first-type stress, and stressing the second channel region with a second-type stress comprises:
stressing a first device area, a first body contact area, and a second body contact area over the semiconductor substrate with the first-type stress; and
stressing a second device area with the second-type stress; wherein the first channel region is formed from the first device area, the first body contact is formed on the first body contact area, the second channel region is formed from the second device area, and the second body contact is formed on the second body contact area.

15. The method of claim 14 wherein:
stressing a first device area, a first body contact area, and a second body contact area over the semiconductor substrate with the first-type stress comprises stressing the first device area in a longitudinal direction and stressing the first body contact area and second body contact area in a lateral direction perpendicular to the longitudinal direction; and
stressing a second device area with the second-type stress comprises str

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Tee Kheng Chok
• Lu Meijun
• Leong Kam Chew

Classifications

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title

• H10D30/021

  of FETs having insulated gates [IGFET] · CPC title

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10D86/01

  Manufacture or treatment · CPC title

• H10D30/796 Primary

  having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates · CPC title