Memristive devices with layered junctions and methods for fabricating the same
US-2015380464-A1 · Dec 31, 2015 · US
Metal organic chemical vapor deposition of embedded resistors for ReRAM cells
US9178152B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178152-B2 |
| Application number | US-201314139186-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2013 |
| Priority date | Dec 23, 2013 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resistor. This variability may be achieved by changing flow rates of MOCVD precursors during formation of the embedded resistor. The second nitride may be concentrated in the middle of the embedded resistor, while the first nitride may be present at interface surfaces of the embedded resistor. As such, the first nitride protects the second nitride from exposure to other components and/or environments and prevents oxidation of the second nitride. Controlling the distribution of the two nitrides within the embedded resistor allows using new materials and achieving consistent performance of the embedded resistor.
First claim
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What is claimed is: 1. A method of fabricating a resistive random access memory cell, the method comprising: providing a substrate; forming a conductive layer over the substrate, wherein the conductive layer is operable as an electrode; forming an resistor over the conductive layer by metal organic chemical vapor deposition (MOCVD), wherein the resistor comprises a first element, a second element, and nitrogen, wherein forming the resistor comprises flowing a first prec…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9178152B2 cover?
- Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resi…
- Who is the assignee on this patent?
- Intermolecular Inc, Intermolecular Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1616. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).