Optical device and a method for manufacturing the same
US-2019377151-A1 · Dec 12, 2019 · US
US9174400B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9174400-B2 |
| Application number | US-70758907-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 15, 2007 |
| Priority date | Feb 15, 2006 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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A method for producing structures ( 5 ) on a multiplicity of optoelectronic components ( 1 ), wherein the multiplicity of optoelectronic components ( 1 ) are arranged on an auxiliary carrier ( 10 ) and the structures ( 5 ) are produced by carrying out a movement of a first roller ( 15 ) relative to the auxiliary carrier ( 10 ) and producing the structures ( 5 ) in the process by means of exerting a pressure between the first roller ( 15 ) and the auxiliary carrier ( 10 ).
Opening claim text (preview).
We claim: 1. A method for producing structures on a multiplicity of optoelectronic components arranged on an auxiliary carrier, the method comprising the steps of: providing the multiplicity of optoelectronic components, each of the optoelectronic components having an active layer comprising an optoelectronic material arranged on the auxiliary carrier before forming the structures on the multiplicity of optoelectronic components; carrying out a relative movement between a first roller and the auxiliary carrier; and exerting a pressure between the first roller and the auxiliary carrier to form the structures on the multiplicity of optoelectronic components. 2. The method according to the claim 1 , wherein a flexible first film is used as the auxiliary carrier. 3. The method according to claim 1 , wherein, by means of the relative movement of the first roller relative to the auxiliary carrier, a stamp is pressed onto the optoelectronic components and the structures are produced thereby. 4. The method according to claim 3 , wherein the optoelectronic components have a photoresist layer arranged on their surfaces, and the structures are produced in the photoresist layer by means of the relative movement between the first roller and the auxiliary carrier. 5. The method according to claim 4 , in which the structures in the photoresist layer are transferred into the optoelectronic components. 6. The method according to claim 3 , in which the stamp is arranged on a surface of the first roller. 7. The method according to claim 4 , in which a second film is additionally used, on which the stamp is arranged, wherein the second film is brought into contact with the optoelectronic components or the photoresist layer by means of the relative movement and the structures are formed by impression of the stamp. 8. The method according to claim 4 , wherein at the same time as the production of the structures in the photoresist layer, said structures are cured. 9. The method according to the claim 8 , in which the structures are cured by an exposure to light and the first roller is transparent to the light used during the exposure. 10. The method according to claim 9 , in which the first roller has arranged on its surface coupling-out structures for coupling out the light used during the exposure. 11. The method according to claim 9 , in which the first roller includes an exposure unit for the exposure. 12. The method according to claim 1 , in which a third film is used, on which the structures are arranged in a patterned layer, wherein the third film is brought into contact with the optoelectronic components by means of the relative movement and the patterned layer is transferred to the optoelectronic components in the process. 13. The method according to claim 1 , wherein a second roller is used, which is moved relative to the auxiliary carrier. 14. The method according to claim 13 , wherein the second roller is arranged relative to the first roller such that the auxiliary carrier with the optoelectronic components is led through between the first and second rollers. 15. The method according to claim 1 , wherein a plurality of coupling-out structures for radiation emitted by the optoelectronic components are produced as the structures. 16. The method according to claim 15 , wherein photonic crystals are produced as coupling-out structures on the optoelectronic components. 17. The method according to claim 15 , wherein the multiplicity of optoelectronic components comprises a multiplicity of radiation-emitting optoelectronic components, wherein the active layer is provided for generating the radiation and is arranged between a first and a second semiconductor layer, and wherein the structures are produced such that the structures are arranged in a beam path of the radiation emitted by the optoelectronic components. 18. The method according to claim 1 , in which thin-film semiconductor bodies are used as the optoelectronic components. 19. The method according to claim 1 , in which the structures are produced as nanostructures. 20. The method according to claim 1 , wherein the structures are formed on a side of at least one of the optoelectronic components facing away from the auxiliary carrier and are not formed through the at least one of the optoelectronic components to the auxiliary carrier. 21. The method according to claim 4 , wherein the structures are formed only in the photoresist layer. 22. A method for producing structures on a multiplicity of optoelectronic components arranged on an auxiliary carrier, the method comprising the steps of: carrying out a relative movement between a first roller and the auxiliary carrier, where the auxiliary carrier carries the multiplicity of optoelectronic components before and during the formation of the structures, each of the optoelectronic components having a photoresist layer and an active layer comprising an optoelectronic material; exerting a pressure between the first roller and the auxiliary carrier to form the structures on the multiplicity of optoelectronic components wherein the structures are formed in the photoresist layer of each of the optoelectronic components; and removing the multiplicity of optoelectronic components from the auxiliary carrier. 23. A method for producing structures on a multiplicity of optoelectronic components arranged on an auxiliary carrier, the method comprising the steps of: arranging a wafer assemblage on an auxiliary carrier before forming the structures, wherein the wafer assemblage comprises a plurality of optoelectronic components, each of the optoelectronic components having an active layer comprising an optoelectronic material; carrying out a relative movement between a first roller and the auxiliary carrier; and exerting a pressure between the first roller and the auxiliary carrier to form the structures on the multiplicity of optoelectronic components. 24. The method of claim 23 , wherein the optoelectronic components are singulated after forming the structures.
Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title
Optical elements or arrangements (surface textures H10F77/70) · CPC title
simultaneous coating and exposure; using a belt mask, e.g. endless · CPC title
Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor · CPC title
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
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