Radioactive ray detector and radioactive ray detecting apparatus

Patent metadata

Field	Value
Publication number	US-9171987-B2
Application number	US-201113813335-A
Country	US
Kind code	B2
Filing date	Aug 1, 2011
Priority date	Aug 4, 2010
Publication date	Oct 27, 2015
Grant date	Oct 27, 2015

Abstract

An object of the present invention is to provide a radioactive ray detector for enabling to reduce the parasitic capacity lower than that of the conventional art, which is generated between the semiconductor elements of the radioactive ray detectors neighboring with, and a radioactive ray detecting apparatus applying that therein. The radioactive ray detector, comprises a substrate, a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning the substrate therebetween, a first electrode pattern, which is electrically connected with the first semiconductor element on a surface facing to an opposite side of the substrate, and a second electrode pattern, which is electrically connected with the second semiconductor element on a surface facing to an opposite side of the substrate, wherein the first electrode pattern and the second electrode pattern are arranged not to overlap with each other, when seeing through the substrate in a direction of thickness thereof.

First claim

What is claimed is:

1. A radioactive ray detector, comprising:
a substrate;
a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning said substrate therebetween;
a first electrode pattern, which is electrically connected with said first semiconductor element on a surface facing to an opposite side of said substrate; and
a second electrode pattern, which is electrically connected with said second semiconductor element on a surface facing to an opposite side of said substrate,
wherein
said first electrode pattern and said second electrode pattern are arranged not to overlap with each other, when seeing through said substrate in a direction of thickness thereof.

2. The radioactive ray detector, as described in the claim 1 , wherein
said first electrode pattern is formed on a first wiring member,
said first wiring member is fixed on said first semiconductor element through a conductive adhesive, which is put between said first electrode pattern and said first semiconductor element,
said second electrode pattern is formed on a second wiring member, and
said second wiring member is fixed on said second semiconductor element through a conductive adhesive, which is put between said second electrode pattern and said second semiconductor element.

3. The radioactive ray detector, as described in the claim 2 , wherein
said first electrode pattern is connected with one of corner regions of said first semiconductor element in a front surface view thereof, and
said second electrode pattern is connected with said second semiconductor element in a corner region diagonally locating to said one corner region, with which said first electrode pattern is connected, when seeing through said substrate in a direction of thickness thereof.

4. The radioactive ray detector, as described in the claim 3 , wherein
a first dummy pattern is further formed on said first wiring member, not to overlap with said first electrode pattern,
said first wiring member is fixed on said first semiconductor element through a conductive adhesive put between said first dummy pattern and said first semiconductor element,
a second dummy pattern is further formed on said second wiring member, not to overlap with said second electrode pattern, and
said second wiring member is fixed on said second semiconductor element through a conductive adhesive put between said second dummy pattern and said second semiconductor element.

5. The radioactive ray detector, as described in the claim 4 , wherein
said first dummy pattern is bonded on said first semiconductor element in the corner region diagonally locating to said one corner region, with which said first electrode pattern is connected, and
said second dummy pattern is bonded on said second semiconductor element in the corner region diagonally locating to said corner region, with which said second electrode pattern is connected.

6. A radioactive ray detecting apparatus constructed by aligning plural numbers of radioactive ray detectors, wherein each of said radioactive ray detectors comprises:
a substrate;
a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning said substrate therebetween;
a first electrode pattern, which is electrically connected with said first semiconductor element on a surface facing to an opposite side of said substrate; and
a second electrode pattern, which is electrically connected with said second semiconductor element on a surface facing to an opposite side of said substrate, wherein
said first electrode pattern and said second electrode pattern are arranged not to overlap with each other, when seeing through said substrate in a direction of thickness thereof.

7. The radioactive ray detecting apparatus, as described in the claim 6 , wherein
said first electrode pattern is formed on a first wiring member,
said first wiring member is fixed on said first semiconductor element through a conductive adhesive, which is put between said first electrode pattern and said first semiconductor element,
said second electrode pattern is formed on a second wiring member, and
said second wiring member is fixed on said second semiconductor element through a conductive adhesive, which is put between said second electrode pattern and said second semiconductor element.

8. The radioactive ray detecting apparatus, as described in the claim 7 , wherein
said first electrode pattern is connected with one of corner regions of said first semiconductor element in a front surface view thereof, and
said second electrode pattern is connected with said second semiconductor element in a corner region diagonally locating to said one corner region, with which said first electrode pattern is connected, when seeing through said substrate in a direction of thickness thereof.

9. The radioactive ray detecting apparatus, as described in the claim 8 , wherein
a first dummy pattern is further formed on said first wiring member, not to overlap with said first electrode pattern,
said first wiring member is fixed on said first semiconductor element through a conductive adhesive put between said first dummy pattern and said first semiconductor element,
a second dummy pattern is further formed on said second wiring member, not to overlap with said second electrode pattern, and
said second wiring member is fixed on said second semiconductor element through a conductive adhesive put between said second dummy pattern and said second semiconductor element.

10. The radioactive ray detecting apparatus, as described in the claim 9 , wherein
said first dummy pattern is bonded on said first semiconductor element in the corner region diagonally locating to said one corner region, with which said first electrode pattern is connected, and
said second dummy pattern is bonded on said second semiconductor element in the corner region diagonally locating to said corner region, with which said second electrode pattern is connected.

Assignees

• Takahashi Isao
• Sunaga Yoshinori
• Kawauchi Hidetaka
• Hitachi Aloka Medical Ltd

Inventors

• Takahashi Isao
• Sunaga Yoshinori
• Kawauchi Hidetaka

Classifications

• H10F30/295 Primary

  Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors · CPC title

• G01T1/241 Primary

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title

• H01L31/118 Primary

  Electricity · mapped topic

• G01T1/243

  Modular detectors, e.g. arrays formed from self contained units (constructional or manufacturing details H10W90/00) · CPC title