Semiconductor detector, radiation detector and radiation detection apparatus

US10094939B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10094939-B2
Application numberUS-201615388254-A
CountryUS
Kind codeB2
Filing dateDec 22, 2016
Priority dateDec 24, 2015
Publication dateOct 9, 2018
Grant dateOct 9, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor detector for detecting radiation, comprising: a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal based on the electron or the hole; a gettering part gettering impurities in the first semiconductor part; and a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than dopant impurity concentration of the first semiconductor part, wherein the second semiconductor part is in contact with the first semiconductor part, the gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part, one of the first semiconductor part and the second semiconductor part includes a constituent composed of n-type silicon and the other of the first semiconductor part and the second semiconductor part includes a constituent composed of p-type silicon, and the gettering part includes n-type polysilicon. 2. The semiconductor detector according to claim 1 , wherein the first semiconductor part has a plate-like shape, the second semiconductor part is located at one surface of the first semiconductor part, the other surface of the first semiconductor part is an entrance surface for incident radiation, and the gettering part is located on the second semiconductor part. 3. The semiconductor detector according to claim 2 , wherein the second semiconductor part is formed with multiple curved elements. 4. A radiation detector, comprising: the semiconductor detector according to claim 1 ; a circuit board on which the semiconductor detector is mounted; and a base plate holding the semiconductor detector and the circuit board. 5. A radiation detection apparatus, comprising: the semiconductor detector according to claim 1 detecting radiation; an output part outputting a signal corresponding to energy of radiation detected by the semiconductor detector; and a spectrum generation part generating a spectrum of the radiation based on the signal output by the output part. 6. A radiation detection apparatus detecting radiation generated from a sample irradiated with radiation, comprising: an irradiation part irradiating a sample with radiation; the semiconductor detector according to claim 1 detecting radiation generated from the sample; an output part outputting a signal corresponding to energy of radiation detected by the semiconductor detector; a spectrum generation part generating a spectrum of the radiation based on the signal output by the output part; and a display part displaying the spectrum generated by the spectrum generation part.

Assignees

Inventors

Classifications

  • G01T1/366Primary

    with semi-conductor detectors · CPC title

  • Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

  • G01T1/24Primary

    with semiconductor detectors · CPC title

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What does patent US10094939B2 cover?
A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part d…
Who is the assignee on this patent?
Fond Bruno Kessler, Horiba Ltd
What technology area does this patent fall under?
Primary CPC classification G01T1/366. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 09 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).