Solid state radiation detector with enhanced gamma radiation sensitivity

Patent metadata

Field	Value
Publication number	US-9831375-B2
Application number	US-201313769401-A
Country	US
Kind code	B2
Filing date	Feb 18, 2013
Priority date	Apr 25, 2012
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A silicon carbide Schottky diode solid state radiation detector that has an electron donor layer such as platinum placed over and spaced above the Schottky contact to contribute high energy Compton and photoelectrical electrons from the platinum layer to the active region of the detector to enhance charged particle collection from incident gamma radiation.

First claim

What is claimed is:

1. A solid state radiation detector comprising:
a Schottky diode having an active semiconductor region and a Schottky contact over at least a portion of the active semiconductor region;
a layer of a Compton and photoelectron source material that reacts with incident gamma radiation to interact with electrons surrounding source atoms of the source material to produce high energy Compton and photoelectric electrons to penetrate into the active region of the Schottky diode through the Schottky contact, the layer of the Compton and photoelectron source material being supported above the Schottky contact; and
a layer of fluid interposed between the Schottky contact and the layer of the Compton and photoelectron source material.

2. The solid state radiation detector of claim 1 wherein the Compton and photoelectron source material is selected from platinum, or other materials with atomic numbers substantially equal to or greater than platinum.

3. The solid state radiation detector of claim 2 wherein the Compton and photoelectron source material is platinum.

4. The solid state radiation detector of claim 1 wherein a Schottky contact is layered on top of the active region which comprises silicon carbide.

5. The solid state radiation detector of claim 1 wherein a thickness of the layer of the Compton and photoelectron source material is determined using a gamma radiation transport method to enhance a number of photoelectrons from the desired incident gamma radiation energy to deposit their energy in the active region of the Schottky diode.

6. The solid state radiation detector of claim 1 wherein the thickness of the layer of fluid is user variable.

7. The solid state radiation detector of claim 1 wherein the charge deposited over a given time on the active semiconductor region is proportional to an energy of gamma radiation incident upon the layer of the Compton and photoelectron source material and including an electrical output representative of both the gamma energy and an intensity of the gamma radiation.

8. The solid state radiation detector of claim 1 wherein the fluid in the gap between the Compton and photoelectron source material layer and the Schottky contact is comprised of air or another material with an effective atomic number and conductivity substantially equal to or less than air.

9. The solid state radiation detector of claim 1 wherein the thickness of the fluid in the gap controls the sensitivity of the detector to the energy of the radiation detected.

10. The solid state radiation detector of claim 9 wherein the thickness of the fluid in the gap between the Compton and photoelectron source material layer and the Schottky contact is adjustable to vary the sensitivity of the detector.

Assignees

• Westinghouse Electric Co Llc

Inventors

• Heibel Michael D
• Walter Melissa M
• Flammang Robert W

Classifications

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• H01L31/118 Primary

  Electricity · mapped topic

• H01L31/108

  Electricity · mapped topic

• H10F30/2955

  Shallow PN junction radiation detectors · CPC title

• H10F30/295 Primary

  Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors · CPC title