Multi-gate devices with replaced-channels and methods for forming the same

Patent metadata

Field	Value
Publication number	US-9171925-B2
Application number	US-201213457258-A
Country	US
Kind code	B2
Filing date	Apr 26, 2012
Priority date	Jan 24, 2012
Publication date	Oct 27, 2015
Grant date	Oct 27, 2015

Abstract

A device includes a semiconductor substrate, isolation regions in the semiconductor substrate, and a Fin Field-Effect Transistor (FinFET). The FinFET includes a channel region over the semiconductor substrate, a gate dielectric on a top surface and sidewalls of the channel region, a gate electrode over the gate dielectric, a source/drain region, and an additional semiconductor region between the source/drain region and the channel region. The channel region and the additional semiconductor region are formed of different semiconductor materials, and are at substantially level with each other.

First claim

What is claimed is:

1. A device comprising:
a semiconductor substrate;
isolation regions in the semiconductor substrate;
a Fin Field-Effect Transistor (FinFET) comprising:
a channel region over the semiconductor substrate;
a gate dielectric on a top surface and sidewalls of the channel region;
a gate electrode over the gate dielectric;
a source/drain region; and
a semiconductor region comprising:
a first portion between the source/drain region and the channel region;…

Assignees

• Kuo Chih-Wei
• Chao Yuan-Shun
• Chen Hou-Yu
• Yang Shyh-Horng
• Taiwan Semiconductor Mfg

Inventors

• Kuo Chih-Wei
• Chao Yuan-Shun
• Chen Hou-Yu
• Yang Shyh-Horng

Classifications

• H10P95/064

  Electricity · mapped topic

• H10P50/642

  Electricity · mapped topic

• H10D30/024

  Electricity · mapped topic

• H10D62/116

  Electricity · mapped topic

• H10D30/62 Primary

  Electricity · mapped topic