Memristive devices with layered junctions and methods for fabricating the same
US-2015380464-A1 · Dec 31, 2015 · US
Apparatuses including electrodes having a conductive barrier material and methods of forming same
US9166158B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166158-B2 |
| Application number | US-201313776485-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 25, 2013 |
| Priority date | Feb 25, 2013 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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Abstract
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Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus, comprising: a first chalcogenide structure, wherein the first chalcogenide structure comprises a switch; a second chalcogenide structure stacked together with the first chalcogenide structure, wherein the second chalcogenide structure comprises a phase change memory storage element; a first electrode portion coupled to the first chalcogenide structure; a second electrode portion coupled to the second chalcogenide structure; and an elect…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L45/12Primary
Electricity · mapped topic
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- What does patent US9166158B2 cover?
- Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion …
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).