Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Semiconductor device
US9147641B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9147641-B2 |
| Application number | US-201314017454-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 4, 2013 |
| Priority date | Feb 18, 2013 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
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- Title
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Abstract
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According to one embodiment, a semiconductor device includes: a semiconductor layer of a first conductivity type, the semiconductor layer having a first surface and a second surface on an opposite side to the first surface; a plurality of conductive layers extending in a direction from the first surface side toward the second surface side of the semiconductor layer; a first semiconductor region of a second conductivity type surrounding part of each of the plurality of conductive layers on the second surface side of the semiconductor layer, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor layer; and an insulating film provided between each of the plurality of conductive layers and the semiconductor layer and between each of the plurality of conductive layers and the first semiconductor region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate of a first conductivity type, the semiconductor substrate having a first surface and a second surface on an opposite side to the first surface; a plurality of conductive layers extending in a direction from the first surface side toward the second surface side of the semiconductor substrate, the conductive layers including a first via and a second via; a first semiconductor region of a second c…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9147641B2 cover?
- According to one embodiment, a semiconductor device includes: a semiconductor layer of a first conductivity type, the semiconductor layer having a first surface and a second surface on an opposite side to the first surface; a plurality of conductive layers extending in a direction from the first surface side toward the second surface side of the semiconductor layer; a first semiconductor region…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10W20/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).