Method of forming protective material between semiconductor die stacked on semiconductor wafer to reduce defects during singulation

US9136144B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9136144-B2
Application numberUS-61787709-A
CountryUS
Kind codeB2
Filing dateNov 13, 2009
Priority dateNov 13, 2009
Publication dateSep 15, 2015
Grant dateSep 15, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor wafer contains first semiconductor die. TSVs are formed through the semiconductor wafer. Second semiconductor die are mounted to a first surface of the semiconductor wafer. A first tape is applied to on a second surface of the semiconductor wafer. A protective material is formed over the second die and first surface of the wafer. The protective material can be encapsulant or polyvinyl alcohol and water. The wafer is singulated between the second die into individual die-to-wafer packages each containing the second die stacked on the first die. The protective material protects the wafer during singulation. The die-to-wafer package can be mounted to a substrate. A build-up interconnect structure can be formed over the die-to-wafer package. The protective material can be removed. Underfill material can be deposited beneath the first and second die. An encapsulant is deposited over the die-to-wafer package.

First claim

Opening claim text (preview).

What is claimed: 1. A method of making a semiconductor device, comprising: providing a semiconductor wafer containing a plurality of first semiconductor die; mounting a plurality of second semiconductor die to a first surface of the semiconductor wafer; placing a tape on a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer; forming a protective material over the second semiconductor die and first surface of the semiconductor wafe…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9136144B2 cover?
A semiconductor wafer contains first semiconductor die. TSVs are formed through the semiconductor wafer. Second semiconductor die are mounted to a first surface of the semiconductor wafer. A first tape is applied to on a second surface of the semiconductor wafer. A protective material is formed over the second die and first surface of the wafer. The protective material can be encapsulant or pol…
Who is the assignee on this patent?
Lim Taegki, Yun Jaeun, Lee Sungyoon, and 1 more
What technology area does this patent fall under?
Primary CPC classification H10W74/012. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).