Method for forming a packaged semiconductor device

US9134366B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9134366-B2
Application numberUS-201314011160-A
CountryUS
Kind codeB2
Filing dateAug 27, 2013
Priority dateAug 27, 2013
Publication dateSep 15, 2015
Grant dateSep 15, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

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A method of fabricating a packaged semiconductor device includes integrating a plurality of singulated semiconductor die in a die carrier, and forming one or more interconnect layers on the die carrier. The interconnect layers include at least one of conductive intra-layer structures and inter-layer structures coupled to contact pads on the plurality of singulated semiconductor die. A set of landing pads is formed coupled to a first subset of the contact pads via a first set of the conductive intra-layer structures and inter-layer structures. A set of probe pads is formed coupled to a second subset of the contact pads via a second set of the conductive intra-layer structures and inter-layer structures. The die carrier is singulated to form a plurality of packaged semiconductor devices. The set of probe pads is removed during the singulating the die carrier.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a packaged semiconductor device, comprising: singulating a wafer into a plurality of semiconductor die; embedding a plurality of the singulated semiconductor die in a die carrier so that contact pads on the die are exposed; forming one or more interconnect layers on the die carrier, wherein the interconnect layers include conductive interconnect structures coupled to the contact pads; forming a set of landing pads coupled to a first…

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What does patent US9134366B2 cover?
A method of fabricating a packaged semiconductor device includes integrating a plurality of singulated semiconductor die in a die carrier, and forming one or more interconnect layers on the die carrier. The interconnect layers include at least one of conductive intra-layer structures and inter-layer structures coupled to contact pads on the plurality of singulated semiconductor die. A set of la…
Who is the assignee on this patent?
Ajuria Sergio A, Nguyen Phuc M, Reber Douglas M, and 1 more
What technology area does this patent fall under?
Primary CPC classification G01R31/2884. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).