Wafer processing method
US-2024395620-A1 · Nov 28, 2024 · US
US9123794B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123794-B2 |
| Application number | US-201314072684-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 5, 2013 |
| Priority date | Sep 13, 2010 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10 −6 Ω·cm or more and 1×10 −3 Ω·cm or less, and the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.
Opening claim text (preview).
What is claimed is: 1. A dicing die bond film comprising a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1 ×10 −6 Ω·cm or more and 1×10 −3 Ω·cm or less, the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa, the conductive particles include first a…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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