Silane or borane treatment of metal thin films

Patent metadata

Field	Value
Publication number	US-9111749-B2
Application number	US-201414300986-A
Country	US
Kind code	B2
Filing date	Jun 10, 2014
Priority date	Mar 14, 2013
Publication date	Aug 18, 2015
Grant date	Aug 18, 2015

Abstract

The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

First claim

What is claimed is:

1. A method of reducing oxidation at an interface between two different metal-containing thin films comprising:
providing a substrate comprising a first metal-containing thin film;
contacting the first metal-containing thin film with a silane compound or a borane compound;
after contacting the substrate with the silane compound or borane compound, depositing a second metal-containing thin film over the first thin film.

2. The method of claim 1 , wherein the first metal-containing thin film is directly over a dielectric material.

3. The method of claim 1 , wherein the first metal-containing thin film comprises a metal selected from Ti, Ta, Hf, V, Nb, and Zr.

4. The method of claim 1 , wherein the first metal-containing thin film is an etch stop layer or barrier layer and the second metal-containing thin film is a workfunction setting layer.

5. The method of claim 1 , wherein the first metal-containing thin film is a TiN, TiAlN, TaN or TiAlCN thin film.

6. The method of claim 1 , wherein the second metal containing thin film comprises an n-type metal.

7. The method of claim 1 , wherein the second metal containing thin film comprises TiAl, TaC, HfC, TaAlC, TiAlSiC, TiAlB, TaAlB, TiAlSiB, TaAl, SiAlSiC or HfAlSiB.

8. The method of claim 1 , wherein the second metal-containing thin film is a titanium carbide film.

9. The method of claim 1 , wherein contacting the first metal-containing thin film with a silane compound or borane compound comprises exposing the first metal-containing thin film to the silane compound or borane compound for a duration of between about 1 second and about 2 minutes.

10. The method of claim 1 , additionally comprising contacting the second metal-containing thin film with a silane or borane compound.

11. The method of claim 1 wherein depositing the second metal-containing thin film comprises an atomic layer deposition process comprising multiple deposition cycles.

12. The method of claim 10 , wherein the substrate is exposed to a silane or borane compound in each deposition cycle.

13. The method of claim 1 , additionally comprising depositing a third metal-containing thin film over the second metal-containing thin film.

14. The method of claim 12 , wherein the substrate is contacted with a silane or borane compound during or after depositing the second metal-containing thin film and prior to depositing the third metal-containing thin film.

15. The method of claim 12 , wherein the substrate is contacted with a silane or borane compound during or after deposition of the third metal-containing thin film.

16. The method of claim 14 , additionally comprising depositing a metal thin film over the third metal-containing thin film.

17. The method of claim 15 , wherein the metal thin film is a tungsten thin film.

18. The deposition method of claim 1 , wherein the silane or borane is selected from the group consisting of monosilane, disilane, trisilane, borane, diborane, and triborane.

19. The deposition method of claim 17 , wherein the silane or borane is trisilane.

20. The deposition method of claim 1 , wherein the first and second metal-containing thin films are deposited in situ.

21. A method for depositing a metal layer over an etch stop layer, the method comprising, sequentially:
providing a substrate comprising an etch stop layer;
contacting the etch stop layer with a silane compound or a borane compound; and
depositing a metal-containing layer over the first etch stop layer.

22. The method of claim 21 , wherein the etch stop layer is a titanium nitride layer and the metal-containing layer comprises an n-type metal.

23. The method of claim 22 , wherein the metal-containing layer comprises TiAl, TaC, HfC, TaAlC, TiAlSiC, TiAl B, TaAlB, TiAlSiB, TaAl, TiAlSiC TaAlSiB, or HfAlSiB.

24. The method of claim 21 , further comprising contacting the metal-containing layer with a silane or borane compound.

25. The method of claim 21 , wherein the metal-containing layer is deposited by an atomic layer deposition process comprising multiple deposition cycles, and wherein the substrate is contacted with a silane or borane compound during at least one of the deposition cycles.

26. The method of claim 25 , wherein the silane or borane is selected from the group consisting of monosilane, disilane, trisilane, borane, diborane, and triborane.

27. The deposition method of claim 21 , wherein contacting the etch stop layer with a silane compound or borane compound does not increase a thickness of a first metal nitride layer.

Assignees

• Asm Ip Holding Bv
• Asm Ip Holdings B V

Inventors

• Shero Eric
• Haukka Suvi

Classifications

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10D64/01318 Primary

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title