Magnetoresistive sensor, related manufacturing method, and related electronic device
US-9450178-B2 · Sep 20, 2016 · US
Semiconductor device with integrated magnetic element provided with a barrier structure against metal contamination, and manufacturing
US9105568B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105568-B2 |
| Application number | US-201314104934-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2013 |
| Priority date | Dec 14, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: (a) providing a semiconductor body having a first side and a second side opposite the first side; (b) forming, on the first side of the semiconductor body, a first barrier element comprising a first material configured to act as barrier against metal ions; (c) forming, on the first barrier layer, a magnetic element comprising a second material having magnetic properties; (d) for…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L27/22Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105568B2 cover?
- A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic elemen…
- Who is the assignee on this patent?
- St Microelectronics Srl
- What technology area does this patent fall under?
- Primary CPC classification H01L27/22. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).