Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device
US-10141068-B2 · Nov 27, 2018 · US
US9129679B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9129679-B2 |
| Application number | US-201313750085-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 25, 2013 |
| Priority date | Sep 5, 2012 |
| Publication date | Sep 8, 2015 |
| Grant date | Sep 8, 2015 |
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A shift register type magnetic memory according to an embodiment includes: a magnetic nanowire; a magnetic material chain provided in close vicinity to the magnetic nanowire, the magnetic material chain including a plurality of disk-shaped ferromagnetic films arranged along a direction in which the magnetic nanowire extends; a magnetization rotation drive unit configured to rotate and drive magnetization of the plurality of ferromagnetic films; a writing unit configured to write magnetic information into the magnetic nanowire; and a reading unit configured to read magnetic information from the magnetic nanowire.
Opening claim text (preview).
What is claimed is: 1. A shift register type magnetic memory comprising: a magnetic nanowire; a magnetic material chain provided in close vicinity to the magnetic nanowire, the magnetic material chain including a plurality of disk-shaped ferromagnetic films arranged along a direction in which the magnetic nanowire extends; a magnetization rotation drive unit configured to rotate and drive magnetization of the plurality of ferromagnetic films; a writing unit configured to wri…
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