Vertical hall device comprising a slot in the hall effect region
US-9222991-B2 · Dec 29, 2015 · US
Magnetic field sensor device
US9166145B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166145-B2 |
| Application number | US-201414287559-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 27, 2014 |
| Priority date | May 24, 2013 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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Abstract
Official abstract text for this publication.
A magnetic field sensor device having a semiconductor body, whereby the semiconductor body has a top side and a bottom side, and whereby the semiconductor body has a substrate layer and a passivation layer formed above the substrate on the top side of the semiconductor body, and one or more integrated electronic components are formed in the substrate layer of the semiconductor body, and a Hall plate is provided on the top side of the semiconductor body above the passivation layer, and the Hall plate is formed of a graphene compound.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic field sensor device comprising: a semiconductor body with a top side and a bottom side, the semiconductor body having a substrate layer and a passivation layer formed above the substrate layer on the top side of the semiconductor body; at least one electronic component formed in the substrate layer; and a Hall plate arranged on the top side of the semiconductor body above the passivation layer, wherein the Hall plate is formed of a graphene…
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Classifications
Electricity · mapped topic
- H01L43/065Primary
Electricity · mapped topic
Electricity · mapped topic
- G01R33/07Primary
Physics · mapped topic
Electricity · mapped topic
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- What does patent US9166145B2 cover?
- A magnetic field sensor device having a semiconductor body, whereby the semiconductor body has a top side and a bottom side, and whereby the semiconductor body has a substrate layer and a passivation layer formed above the substrate on the top side of the semiconductor body, and one or more integrated electronic components are formed in the substrate layer of the semiconductor body, and a Hall …
- Who is the assignee on this patent?
- Micronas Gmbh
- What technology area does this patent fall under?
- Primary CPC classification H01L43/065. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).