Method of chemical mechanical polishing a substrate

Patent metadata

Field	Value
Publication number	US-9102034-B2
Application number	US-201314014498-A
Country	US
Kind code	B2
Filing date	Aug 30, 2013
Priority date	Aug 30, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.

First claim

We claim:

1. A method of chemical mechanical polishing a substrate, comprising:
providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;
providing a chemical mechanical polishing pad, comprising:
a polishing layer having a composition and a polishing surface, wherein the composition of the polishing layer is selected to exhibit (i) an initial hydrolytic stability, wherein a linear dimension of a sample of the polishing layer changes by <1% following immersion in deionized water for 24 hours at 25 ° C.; coupled with (ii) a sustained hydrolytic instability, wherein the linear dimension of the sample of the polishing layer changes by >1.75% following immersion in deionized water for seven days at 25 ° C.;
a rigid layer having a top surface and a bottom surface, wherein the rigid layer exhibits a Young's Modulus of at least 100 MPa;
a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer;
a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer;
optionally, a release liner; wherein the optional release liner is disposed on the platen side of the pressure sensitive platen adhesive layer;
optionally, an endpoint detection window; and,
optionally, at least one additional layer interfaced with and interposed between the bottom surface of the rigid layer and the stack side of the pressure sensitive platen adhesive layer; and,

creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.

2. The method of claim 1 , wherein the substrate is a semiconductor substrate.

3. The method of claim 2 , wherein the semiconductor substrate has an exposed copper surface; and, wherein at least some of the exposed copper surface is polished away from the surface of the substrate.

4. The method of claim 3 , wherein the chemical mechanical polishing pad provided has at least one additional layer interfaced with and interposed between the bottom surface of the rigid layer and the stack side of the pressure sensitive platen adhesive layer.

5. The method of claim 1 , wherein the polishing layer is a cast polyurethane, wherein the cast polyurethane is a reaction product of ingredients, comprising:
an isocyanate terminated urethane prepolymer obtained by reaction of:
a toluene diisocyanate; and,
a polypropylene glycol based polyol;
wherein the isocyanate terminated urethane prepolymer has greater than 8.7 to 9 wt % unreacted NCO;

a curative agent, wherein the curative agent is 4,4′-methylene-bis-(2-chloroaniline); and,
optionally, a plurality of microelements;

wherein the polishing layer exhibits a Shore D hardness of 60 to 90; and, an elongation to break of 100 to 300%; and, wherein the polishing surface is adapted for polishing the substrate.

6. The method of claim 5 , wherein the curative and the isocyanate terminated prepolymer have an OH or NH 2 to unreacted NCO stoichiometric ratio of 80 to 120 percent.

7. The method of claim 1 , wherein the top surface of the rigid layer is ungrooved; and wherein the bottom surface of the rigid layer is ungrooved.

8. The method of claim 1 , wherein the top surface and the bottom surface of the rigid layer have a roughness, Ra, of 1 to 500 nm.

9. The method of claim 1 , wherein the rigid layer is made of a biaxially oriented polyethylene terephthalate; wherein the rigid layer has an average thickness of 6 to 15 mils; and, wherein the rigid layer exhibits a Young's Modulus of 3,000 to 7,000 MPa.

10. The method of claim 1 , wherein the chemical mechanical polishing pad provided has an endpoint detection window.

11. The method of claim 1 , wherein the rigid layer is made of a material selected from the group consisting of a polymer, a metal, a reinforced polymer and combinations thereof.

Assignees

• Rohm & Haas Elect Mat
• Dow Global Technologies Llc

Inventors

• Jensen Michelle
• Qian Bainian
• Yeh Fengji
• Degroot Marty W
• Islam Mohammad T
• Van Hanehem Matthew Richard
• String Darrell
• Murnane James
• Hendron Jeffrey James
• Nowland John G

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C08G18/10

  Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step · CPC title

• B24B37/205 Primary

  provided with a window for inspecting the surface of the work being lapped · CPC title

• B24B37/22

  characterised by a multi-layered structure · CPC title