Laser and plasma etch wafer dicing using water-soluble die attach film
US-9224625-B2 · Dec 29, 2015 · US
US9102008B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9102008-B2 |
| Application number | US-24127408-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2008 |
| Priority date | Jan 7, 2002 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A method of minimizing the deposition of debris onto a sample being ablated. The method comprises: 1) reducing a laser pulse energy to approximately a threshold level for ablation; 2) focusing the energy using an immersion object lens having a final element and 3) ablating a region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase.
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What is claimed is: 1. A method of minimizing the deposition of debris onto a sample being ablated, the method comprising: selecting the sample from Cr on SiO 2 ; mounting the sample on a computer controlled stage; scanning a pulsed laser beam over a region of the sample to be ablated; reducing the laser pulse energy to approximately a threshold level for ablation, wherein a duration of the laser pulse is about 100 fs, and the wavelength of the light beam is about 800 nm; focusing said energy to a spot having a diameter less than a structure to be removed using an immersion object lens having a final element; ablating the region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase, the region being ablated having a high aspect ratio structure of depth to width; flowing a liquid selected from the group consisting of water and methanol past the region being ablated to transport the ablation products from the sample, the liquid filling the target area; and matching the index of refraction of said liquid to at least one of the index of refraction of said final element or the index of refraction of said sample. 2. A method of minimizing the deposition of debris onto a sample being ablated, the method comprising: reducing a laser pulse energy to approximately a threshold level for ablation; focusing said energy to a spot having a diameter less than a structure to be removed; and ablating a region of the sample using a multitude of laser pulses. 3. A method of minimizing the deposition of debris onto a sample being ablated, the method comprising: reducing a laser pulse energy to approximately a threshold level for ablation; and ablating a region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase. 4. A method in accordance with claim 3 further including flowing a fluid past the region being ablated to transport the ablation products from the sample. 5. The method in accordance with claim 3 further including scanning the laser beam over the region. 6. The method in accordance with claim 3 wherein the sample is chromium on glass, a duration of the laser pulse is about 100 fs, and a wavelength of the light is about 800 nm. 7. The method in accordance with claim 3 further including mounting the sample on a computer controlled stage. 8. The method in accordance with claim 3 wherein the sample is composed of chromium on silicon dioxide. 9. The method of claim 2 , further comprising: focusing said energy using an immersion object lens having a final element; flowing a liquid past the region being ablated to transport the ablation products from the sample; and matching the index of refraction of said liquid to at least one of the index of refraction of said final element or the index of refraction of said sample. 10. The method in accordance with claim 9 wherein the liquid is selected from the group consisting of water and methanol. 11. The method in accordance with claim 9 wherein the liquid fills the target area. 12. The method in accordance with claim 2 wherein the region being ablated has a high aspect ratio structure of depth to width. 13. The method in accordance with claim 9 further including scanning the laser beam over the region. 14. The method in accordance with claim 9 wherein the sample is chromium on glass, a duration of the laser pulse is about 100 fs, and a wavelength of the light is about 800 rim. 15. The method in accordance with claim 9 further including mounting the sample on a computer controlled stage. 16. The method in accordance with claim 9 wherein the sample is composed of chromium on silicon dioxide. 17. The method in accordance with claim 9 , wherein said matching comprises matching the index of refraction of said liquid to the index of refraction of said final element. 18. The method in accordance with claim 9 , wherein said matching comprises matching the index of refraction of said liquid to the index of refraction of said sample.
Operations & Transport · mapped topic
Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece (by a fluid stream B23K26/142) · CPC title
Operations & Transport · mapped topic
Features inside the nozzle for feeding the fluid stream through the nozzle · CPC title
Features outside the nozzle for feeding the fluid stream towards the workpiece · CPC title
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