Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure
US9099461B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099461-B2 |
| Application number | US-201213490740-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 7, 2012 |
| Priority date | Jun 7, 2012 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Abstract
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A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH 3 ); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.
First claim
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What is claimed is: 1. A method of forming a semiconductor device, the method comprising: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH 3 ); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak. 2. The method of claim 1 , wherein the anneali…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9099461B2 cover?
- A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH 3 ); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a parameter of the environment based on the monitoring of the nitrogen peak.
- Who is the assignee on this patent?
- Chudzik Michael P, Dai Min, Liu Jinping, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10D64/685. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).