Methods of manufacturing embedded bipolar switching resistive memory

Patent metadata

Field	Value
Publication number	US-9076523-B2
Application number	US-201213714173-A
Country	US
Kind code	B2
Filing date	Dec 13, 2012
Priority date	Dec 13, 2012
Publication date	Jul 7, 2015
Grant date	Jul 7, 2015

Abstract

Non linear current response circuits can be used in embedded resistive memory cell for reducing power consumption, together with improving reliability of the memory array. The non linear current response circuits can include two back to back leaky PIN diodes, two parallel anti-directional PIN diodes, two back to back Zener-type metal oxide diodes, or ovonic switching elements, along with current limiting resistor for standby power reduction at the low voltage region. Also, the proposed embedded ReRAM implementation methods based upon 1T2D1R scheme can be integrated into the advanced FEOL process technologies including vertical pillar transistor and/or 3D fin-shaped field effect transistor (FinFET) for realizing a highly compact cell density.

First claim

What is claimed is:

1. A memory device comprising
a resistive memory element,
wherein the resistive memory element is operable to switch from a first resistance state to a second resistance state based on a first applied voltage,
wherein the resistive memory element is operable to switch from the second resistance state to the first resistance state based on a second applied voltage,
wherein the first applied voltage is opposite in polarity to the second applied voltage;

a non linear response circuit serially coupled with the resistive memory element,
wherein the non linear response circuit comprises two leaky PIN diodes connected back in series,
wherein each of the two leaky PIN diodes comprises an undoped intrinsic semiconductor region between a doped p-type semiconductor region and a doped n-type semiconductor region,

wherein the non linear response circuit is configured to have a first current gain at first set of voltages and second current gain at second set of voltages,
wherein the first current gain is smaller than the second current gain,
wherein the absolute values of the first set of voltages are smaller than the absolute values of the second set of voltages, and

a transistor,
wherein the transistor is operable as a selector device for the memory element.

2. A memory device as in claim 1 , wherein the non linear response circuit reduces a current passing the memory element at an operating voltage.

3. A memory device as in claim 1 , wherein the non linear response circuit is further operable as a current limiter for the memory element.

4. A memory device as in claim 1 , wherein the transistor comprises a planar transistor or a vertical transistor.

5. A memory device as in claim 1 , wherein the transistor comprises a fin planar transistor.

6. A memory device as in claim 1 ,
wherein the first set of voltages is ranged from zero to more than half of the first applied voltage or to more than half of the second applied voltage,
wherein the second set of voltages is ranged from less than half of the first applied voltages to the first applied voltage or from less than half of the second applied voltages to the second applied voltage.

7. A memory device as in claim 1 ,
wherein the transistor is coupled to the memory element, and wherein the memory element is coupled to the non linear response circuit, or
wherein the transistor is coupled to the non linear response circuit, and wherein the non linear response circuit is coupled to the memory element.

8. A memory array comprising
a plurality of first conductive lines;
a plurality of second conductive lines,
wherein the plurality of second conductive lines is substantially parallel to the plurality of first conductive lines;

a plurality of third conductive lines,
wherein the plurality of third conductive lines forms an angle with the plurality of first conductive lines;

a plurality of resistive memory devices, wherein each of the plurality of resistive memory device comprises
a resistive memory element,
wherein the resistive memory element is operable to switch from a first resistance state to a second resistance state based on a first applied voltage,
wherein the resistive memory element is operable to switch from the second resistance state to the first resistance state based on a second applied voltage,
wherein the first applied voltage is opposite in polarity to the second applied voltage;

a non linear response circuit serially coupled with the resistive memory element,
wherein the non linear response circuit comprises two leaky PIN diodes connected back to back in series,
wherein each of the two leaky PIN diodes comprises undoped intrinsic semiconductor region between a doped p-type semiconductor region and a doped n-type semiconductor region,

wherein the non linear response circuit is configured to have a first current gain at first set of voltages and second current gain at second set of voltages,
wherein the first current gain is smaller than the second current gain,
wherein the absolute values of the first set of voltages are smaller than the absolute values of the second set of voltages,
wherein either the resistive memory element or the non linear response circuit is coupled to one of the plurality of first conductive lines, the plurality of second conductive lines, or the plurality of third conductive lines,

a transistor comprising a gate electrode, a source electrode and a drain electrode,
wherein the transistor is operable as a selector device for the memory element,
wherein the gate electrode is coupled to one of the plurality of the first conductive lines, the plurality of second conductive lines, or the plurality of third conductive lines,
wherein the source or drain electrode of the transistor is coupled to one of the plurality of first conductive lines, the plurality of second conductive lines, or the plurality of third conductive lines,
wherein the drain or source electrode of the transistor is coupled to either the non linear response circuit or the resistive memory element.

9. A memory array as in claim 8 wherein the non linear response circuit reduces a current passing the memory element at an operating voltage.

10. A memory array as in claim 8 ,
wherein the first set of voltages is ranged from zero to more than half of the first applied voltage or to more than half of the second applied voltage,
wherein the second set of voltages is ranged from less than half of the first applied voltages to the first applied voltage or from less than half of the second applied voltages to the second applied voltage.

11. A memory array as in claim 8 , wherein the transistor comprises one of
a planar CMOS transistor,
a vertical pillar transistor, or
a 3D fin-shaped field effect transistor.

12. The memory array of claim 8 , wherein the resistive memory element is operable as a metallic switching device serially connected to a memory stack and is formed with a high productivity combinatorial (HPC) material section.

13. The memory array of claim 8 , further comprising horizontal word lines that cross vertical bit lines.

14. The memory array of claim 8 , wherein spacers cover sidewalls of the gate electrode.

Assignees

• Intermolecular Inc

Inventors

• Lee Mankoo
• Chiang Tony
• Pramanik Dipankar

Classifications

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• G11C2213/77

  Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used · CPC title

• G11C13/0002 Primary

  using resistive RAM [RRAM] elements · CPC title

• G11C13/0069

  Writing or programming circuits or methods · CPC title

• G11C2213/72

  Array wherein the access device being a diode · CPC title