MEMS structure and method of forming same

Patent metadata

Field	Value
Publication number	US-9065358-B2
Application number	US-201113219927-A
Country	US
Kind code	B2
Filing date	Aug 29, 2011
Priority date	Jul 11, 2011
Publication date	Jun 23, 2015
Grant date	Jun 23, 2015

Abstract

A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces.

First claim

What is claimed is:

1. A microelectromechanical system (MEMS) device comprising:
a first substrate comprising a plurality of interconnect layers embedded in a respective plurality of stacked dielectric layers and having a topmost dielectric layer, the topmost dielectric layer having a topmost surface and defining a cavity having a floor;
a second substrate mounted atop the first substrate and bonded to the topmost dielectric layer, the second substrate comprising a movable element at least partially suspended above the cavity; and
a protrusion extending from the floor of the cavity and having a topmost surface below the topmost of the topmost dielectric layer, the protrusion being positioned to engage the movable element when the movable element is deflected, the protrusion comprising a conductive element electrically coupled to one of the interconnect layers; and
a via extending from a first side of the second substrate and extending through the second substrate to a second side of the second substrate and further extending through the topmost dielectric layer, the via having a conductor therein that physically contacts an interconnect embedded in a dielectric layer of the plurality of stacked dielectric layers, the conductor of the via electrically coupling an element on the second substrate to an element of the first substrate.

2. The MEMS device of claim 1 further comprising a sense electrode and wherein the protrusion has a same height as the sense electrode, and further wherein the protrusion is located such that the movable element will contact the protrusion when the movable element is deflected and hence is prevented from contacting the sense electrode when deflected.

3. The MEMS device of claim 1 wherein the protrusion comprises a silicon oxide protrusion covered with a conductive film.

4. The MEMS device of claim 3 wherein the conductive film comprises a material selected from the group consisting of TiN, AlCu, amorphous Carbon, a stacked film of TiN/AlCu, and combinations thereof.

5. The MEMS device of claim 1 wherein the protrusion comprises a metal feature formed on the first substrate.

6. The MEMS device of claim 1 further comprising a contact on the floor of the first cavity.

7. The MEMS device of claim 1 wherein the first substrate and the second substrate are bonded at a bond interface and wherein second substrate has a substantially planar surface at the bond interface.

8. A microelectromechanical system (MEMS) device comprising:
a first substrate;
a plurality of dielectric layers atop the first substrate, a topmost of the plurality of dielectric layers comprising a bonding layer having a top surface and having a cavity formed therein;
a plurality of interconnect layers embedded in respective ones of the plurality of dielectric layers;
a second substrate bonded to the bonding layer;
a movable element formed at least in part in the second substrate and having at least one degree of freedom defining a motion path;
a protrusion extending from a floor of the cavity and located in the motion path of the movable element, the protrusion being contained entirely within the cavity in the bonding layer;
a via extending from a first side of the second substrate and extending through the second substrate to a second side of the second substrate and further extending through the bonding layer to electrically contacting a contact formed atop a dielectric layer of the plurality of dielectric layers; and
an electrical path between the protrusion and at least one of the interconnect layers.

9. The MEMS device of claim 8 further comprising a cavity formed in the bonding layer, wherein the movable element is suspended over the cavity.

10. The MEMS device of claim 9 wherein the protrusion is formed within the cavity and further comprising a sensor electrode formed within the cavity.

11. The MEMS device of claim 9 wherein the protrusion includes a plurality of protrusions formed within the cavity.

12. The MEMS device of claim 8 wherein the protrusion comprises a protrusion formed in one of the dielectric layers and having a conductive layer formed thereon.

13. The MEMS device of claim 8 wherein the protrusion comprises a metallic protrusion formed in a topmost one of the interconnect layers.

14. The MEMS device of claim 8 wherein the movable element includes at least one of a beam, a membrane, or a comb structure.

Assignees

• Tsai Yi Heng
• Chu Chia-Hua
• Chang Kuei-Sung
• Taiwan Semiconductor Mfg

Inventors

• Tsai Yi Heng
• Chu Chia-Hua
• Chang Kuei-Sung

Classifications

• Y10T29/49002

  Electrical device making · CPC title

• B81B3/001

  Structures having a reduced contact area, e.g. with bumps or with a textured surface · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• G01P15/125

  by capacitive pick-up · CPC title

• B81B3/0008

  Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation · CPC title