Electrical Testing for Panel Characterization and Defect Screening
US-2024402237-A1 · Dec 5, 2024 · US
Charged particle beam apparatus
US9040937B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040937-B2 |
| Application number | US-201314391671-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 11, 2013 |
| Priority date | Apr 13, 2012 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
In a pattern inspection of a semiconductor circuit, to specify a cause of a process defect, not only a distribution on and across wafer of the number of defects but also more detailed, that is, the fact that how many defects occurred where on the semiconductor pattern is needed to be specified in some cases. Accordingly, the present invention aims to provide an apparatus capable of easily specifying a cause of a process defect based upon a positional relationship of a distribution of defect occurrence frequency and a pattern. The apparatus includes: a charged particle beam optical system for detecting secondary charged particles by irradiating the charged particle beam to the sample; an image processing unit for, based upon a plurality of images to be inspected that are obtained by the secondary charged particles, obtaining an occurrence frequency of defect candidates for each of predetermined regions inside the detected image; and a display unit for displaying the distribution of the occurrence frequency of the defect candidates so that a positional relationship to the pattern is recognized.
First claim
Opening claim text (preview).
The invention claimed is: 1. A charged particle beam apparatus, which detects a defect of a pattern of a sample by irradiating a charged particle beam thereto, the charged particle beam apparatus comprising: a charged particle beam optical system for detecting secondary charged particles by irradiating the charged particle beam to the sample; an image processing unit for, based upon a plurality of images to be inspected that are obtained by the secondary charged particles, obtai…
Assignees
Inventors
Classifications
- H10P74/203Primary
Electricity · mapped topic
- H10P74/23Primary
Electricity · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9040937B2 cover?
- In a pattern inspection of a semiconductor circuit, to specify a cause of a process defect, not only a distribution on and across wafer of the number of defects but also more detailed, that is, the fact that how many defects occurred where on the semiconductor pattern is needed to be specified in some cases. Accordingly, the present invention aims to provide an apparatus capable of easily speci…
- Who is the assignee on this patent?
- Hitachi High Tech Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P74/203. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).