Method and apparatus for determining the absorption in a blank

Patent metadata

Field	Value
Publication number	US-9036152-B2
Application number	US-201414150552-A
Country	US
Kind code	B2
Filing date	Jan 8, 2014
Priority date	Jul 8, 2011
Publication date	May 19, 2015
Grant date	May 19, 2015

Abstract

A method for determining the absorption of a blank ( 2 ) for producing an optical element ( 3 ), including: radiating a heating light ray ( 8 ) through the blank ( 2 ) for the purpose of heating the blank ( 2 ), and determining the absorption in the blank ( 2 ) by measuring at least one property of a measurement light ray ( 10 ) influenced by the heating of the blank ( 2 ). In the method, either the heating light ray ( 8 ) and the measurement light ray ( 10 ) or the heating light ray and a further heating light ray are oriented to enter into the blank ( 2 ) through a first polished surface ( 2 a ) or a second polished surface ( 2 b ), situated opposite the first surface, and meet one another exclusively in the interior of the blank ( 2 ), preferably in a volume ( 12 ) used for the production of the optical element ( 3 ). An associated measuring apparatus ( 1 ), optical element ( 3 ), and optical arrangement are also disclosed.

First claim

The invention claimed is:

1. Method for determining absorption of a blank provided for producing an optical element, comprising:
radiating a heating light ray through the blank for heating the blank, and determining the absorption in the blank by measuring at least one property of a measurement light ray influenced by the heating of the blank, wherein either the heating light ray and the measurement light ray or the heating light ray and a further heating light ray are oriented to enter into the blank through a first polished surface or a second polished surface situated opposite the first surface, and to meet one another exclusively in an overlap region in an interior of the blank at which the measurement light ray and the heating light ray or the two heating light rays meet one another.

2. Method according to claim 1 , wherein the heating light ray and the measurement light ray or the two heating light rays meet one another in the interior of the blank at an angle (β) of less than 90°.

3. Method according to claim 2 , wherein the angle (β) is less than 30°.

4. Method according to claim 1 , wherein, as a property of the measurement light ray, a wavefront deformation (ΔW) of the measurement light ray brought about by the heating light ray is measured in a spatially resolved manner.

5. Method according to claim 4 , wherein the wavefront deformation is measured with a Shack-Hartmann sensor.

6. Method according to claim 1 , wherein the position of the overlap region at is varied in the volume used for the production of the optical element in at least two dimensions (X, Y), (X, Y, Z), in order to determine the spatially resolved absorption behavior in the blank.

7. Method according to claim 6 , further comprising creating a model for the temperature-dependent refractive index variation (Δn) of the optical element from the blank from the spatially resolved absorption behavior in the blank.

8. Method according to claim 1 , wherein the measurement light ray has a rectangular or an elliptical cross section.

9. Method according to claim 1 , wherein the measurement light ray and the heating light ray are at a distance (a) of at least 5 mm from one another on the first and the second polished surfaces.

10. Method according to claim 1 , wherein at least one property of the measurement light ray deflected by the polished surface in a region in between the two heating light rays is measured.

11. Method according to claim 1 , wherein the wavelength (λ h ) of the heating light ray deviates from the used wavelength (λ u ) of the optical element by less than 5 nm, wherein the used wavelength (λ u ) is 250 nm or less.

12. Method according to claim 1 , wherein the wavelength (λ m ) of the measurement light ray deviates from the wavelength (λ h ) of the heating light ray by more than 250 nm.

13. Method according to claim 1 , further comprising:
irradiating the blank with a predefined radiation dose before determining the absorption of the blank.

14. Method according to claim 1 , wherein an optical element is produced from blanks in which, in the entire volume used for the production of the optical element, at a wavelength of 193 nm, an absorption coefficient k 0 of 2×10 −4 /cm or less is measured.

15. Optical element which, in an entire volume thereof, at a wavelength of 193 nm, has an absorption coefficient k 0 of 2×10 −4 /cm or less, wherein the absorption coefficient k 0 is determined by a method according to claim 1 .

16. Optical arrangement, comprising at least one optical element according to claim 15 .

17. Optical arrangement comprising at least one optical element having a subaperture ratio of greater than 50% at a wavelength of 193 nm, and having an absorption coefficient k 0 of 1×10 −4 /cm or less, wherein the absorption coefficient k 0 is determined by a method according to claim 1 .

18. Optical arrangement according to claim 17 , configured as a projection lens for microlithography which, given a throughput of at least 200 wafers/hour having a wafer diameter of 300 mm and a resist sensitivity of 33 mJ/cm 2 , has an uncorrected dynamic wavefront deformation of less than 80 nm PV.

19. Optical arrangement according to claim 17 , configured as a projection lens for microlithography which, given a throughput of at least 200 wafers/hour having a wafer diameter of 300 mm and a resist sensitivity of 33 mJ/cm 2 has an uncorrected dynamic wavefront deformation of less than 20 nm PV.

20. Optical arrangement comprising at least one optical element arranged upstream of a first pupil plane or downstream of a second pupil plane, at a wavelength of 193 nm, and having an absorption coefficient k 0 of 1×10 −4 /cm or less, wherein the absorption coefficient k 0 is determined by a method according to claim 1 .

21. Method according to claim 1 , wherein the interior of the blank is located in a volume of the blank used for production of the optical element.

22. Optical arrangement comprising at least one optical element having a subaperture ratio of greater than 80% at a wavelength of 193 nm, wherein the absorption coefficient k 0 is 0.5×10 −4 /cm or less, and wherein the absorption coefficient k 0 is determined by the method according to claim 1 .

23. Apparatus for determining the absorption of a blank for producing an optical element, comprising:
a holding device for the blank,
at least one heating light source to generate at least one heating light ray for heating the blank,
a measurement light source to generate a measurement light ray,
and a detector unit to measure at least one property of the measurement light ray influenced by the heating of the blank,

wherein either the heating light ray and the measurement light ray or the heating light ray and a further heating light ray are oriented to enter into the blank through a first polished surface or a second polished surface situated opposite the first surface, and to meet one another exclusively in an overlap region in an interior of the blank at which the measurement light ray and the heating light ray or the two heating light rays meet one another.

24. Apparatus according to claim 23 , wherein the heating light ray and the measurement light ray or the two heating light rays meet one another in the interior of the blank at an angle (β) of less than 90°.

25. Apparatus according to claim 23 , wherein the holding device for the blank is displaceable linearly in at least two directions (X, Y).

26. Apparatus according to claim 23 , wherein the detector unit comprises a Shack-Hartmann sensor configured to measure wavefront deformations.

27. Apparatus according to claim 23 , wherein the interior of the blank is located in a volume used for production of the optical element.

28. Apparatus according to claim 23 , wherein the angle (β) is less than 30°.

29. Optical arrangement, configured as a projection lens for microlithography:
comprising at least one optical element which, in an entire volume thereof has an absorption coefficient k 0 of 2×10 −4 /cm or less at a wavelength of 193 nm,
wherein the optical arrangement, given a throughput of at least 200 wafers/hour, each having a wafer diameter of 300 mm and a resist sensitivity of 33 mJ/cm 2 , has an uncorrected dynamic wavefront deformation of less than 80 nm PV, and
wherein the absorption coefficient k 0 is determined by a method for determining absorp

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Eva Eric

Classifications

• G01M11/0257

  by analyzing the image formed by the object to be tested · CPC title

• G01M11/0285

  by measuring material or chromatic transmission properties (G01M11/0292 takes precedence) · CPC title

• G02B13/143

  for use with ultraviolet radiation · CPC title

• G01N21/171 Primary

  with calorimetric detection, e.g. with thermal lens detection · CPC title

• G01N21/17 Primary

  Systems in which incident light is modified in accordance with the properties of the material investigated (where the material investigated is optically excited causing a change in wavelength of the incident light G01N21/63) · CPC title