Methods for shallow trench isolation formation in a silicon germanium layer
US-2015371889-A1 · Dec 24, 2015 · US
Semiconductor device manufacturing method
US9034698B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9034698-B2 |
| Application number | US-201414464978-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 21, 2014 |
| Priority date | Aug 23, 2013 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl 2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl 2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.
First claim
Opening claim text (preview).
We claim: 1. A semiconductor device manufacturing method, comprising: exciting a processing gas containing a HBr gas and a Cl 2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer, wherei…
Assignees
Inventors
Classifications
- H10P50/268Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D64/664Primary
Electricity · mapped topic
- H01L29/4941Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9034698B2 cover?
- A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl 2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, an…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/268. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).