Techniques for selective deposition using angled ions
US-2019256966-A1 · Aug 22, 2019 · US
Alignment film forming apparatus and method
US9034151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9034151-B2 |
| Application number | US-17489708-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 17, 2008 |
| Priority date | Aug 22, 2007 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Abstract
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An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target.
First claim
Opening claim text (preview).
What is claimed: 1. An apparatus for forming an alignment film on a substrate using ion beam sputtering to execute (i) a film deposition process that deposits, on a first surface side of the substrate, a sputtering film having an orientation and (ii) an alignment process that forms the alignment film on the first surface side of the substrate, the apparatus comprising: a target comprising polyimide and disposed on the first surface side of the substrate, the target having a sputte…
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Electricity · mapped topic
- C23C14/3442Primary
Chemistry & Metallurgy · mapped topic
Physics · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9034151B2 cover?
- An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having …
- Who is the assignee on this patent?
- Doi Shoichi, Nishiwaki Tatsuya, IBM
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3442. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).