Deposition system for growth of inclined c-axis piezoelectric material structures

Patent metadata

Field	Value
Publication number	US-9922809-B2
Application number	US-201615293063-A
Country	US
Kind code	B2
Filing date	Oct 13, 2016
Priority date	Oct 14, 2015
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

First claim

What is claimed is:

1. A deposition system comprising:
a linear sputtering apparatus comprising a target surface configured to eject metal atoms;
a substrate table comprising a support surface that is configured to receive at least one wafer and is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer during operation of the linear sputtering apparatus; and
a collimator comprising a plurality…

Assignees

• Qorvo Us Inc

Inventors

• Mccarron Kevin
• Belsick John

Classifications

• C30B25/186

  Chemistry & Metallurgy · mapped topic

• C23C14/226

  Chemistry & Metallurgy · mapped topic

• H03H9/175

  Electricity · mapped topic

• C23C14/566

  Chemistry & Metallurgy · mapped topic

• C23C14/35

  Chemistry & Metallurgy · mapped topic