Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
Formation of an alignment film for a liquid crystal on a substrate
US9869014B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9869014-B2 |
| Application number | US-201514628356-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 23, 2015 |
| Priority date | Aug 22, 2007 |
| Publication date | Jan 16, 2018 |
| Grant date | Jan 16, 2018 |
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Abstract
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A method for forming an alignment film for a liquid crystal on a substrate and an associated at least one structure. The substrate is moved in a first direction. A target is disposed on the first surface side of the substrate. The ion beam is propagated from an ion source toward the substrate and impinges on a sputtering surface of the target, which sputters a material of the target and results in sputtered particles of the material being emitted from the sputtering surface of the target and deposited on the first surface side of the substrate to form (i) a sputtering film on the first surface side of the substrate and (ii) an alignment film having an orientation and being disposed on the sputtering film and on the entire surface of the substrate. The alignment film aligns molecules of the liquid crystal in a predetermined direction.
First claim
Opening claim text (preview).
What is claimed: 1. A method for forming an alignment film for a liquid crystal on a substrate, said method comprising: moving the substrate linearly in a first direction differing from a second direction in which a normal direction of a sputtering surface of a target is projected on a first surface side of the substrate, said sputtering surface of the target disposed above the first surface side of the substrate, wherein the target comprises polyimide; and propagating only a si…
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Chemistry & Metallurgy · mapped topic
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9869014B2 cover?
- A method for forming an alignment film for a liquid crystal on a substrate and an associated at least one structure. The substrate is moved in a first direction. A target is disposed on the first surface side of the substrate. The ion beam is propagated from an ion source toward the substrate and impinges on a sputtering surface of the target, which sputters a material of the target and results…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification C23C14/221. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).