Atomic layer deposition apparatus

Patent metadata

Field	Value
Publication number	US-9031685-B2
Application number	US-201414149560-A
Country	US
Kind code	B2
Filing date	Jan 7, 2014
Priority date	Jul 27, 2001
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

First claim

What is claimed is:

1. An apparatus comprising:
a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions;
a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region; and
a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region, wherein the feature operable to minimize intermixing of gases between the first deposition region and the second deposition region comprises an inert gas flow.

2. The apparatus of claim 1 , further comprising:
a means for moving a substrate disposed in the internal volume of the chamber body between a first position in the first deposition region adjacent the first gas port and a second position in the second deposition region adjacent the second gas port.

3. The apparatus of claim 2 , wherein the substrate is a semiconductor wafer.

4. The apparatus of claim 1 , further comprising:
a substrate support disposed in the internal volume of the chamber body and movable to a first position in the first deposition region adjacent the first gas port and a second position in the second deposition region adjacent the second gas port.

5. The apparatus of claim 4 , wherein a piston coupled to the substrate support moves the substrate support between the first deposition region and the second deposition region.

6. The apparatus of claim 4 , wherein the substrate support is an electrostatic chuck.

7. The apparatus of claim 4 , further comprising a heater element embedded in the substrate support, wherein the heater element controls the temperature of a substrate disposed on the substrate support.

8. The apparatus of claim 7 , further comprising a thermocouple embedded in the substrate support to monitor the temperature of the substrate support.

9. The apparatus of claim 8 , wherein the temperature measured by the thermocouple can be used in a feedback loop to control power supplied to the embedded heater element.

10. The apparatus of claim 1 , further comprising:
a heater that controls the temperature of a substrate disposed thereon in each of the first deposition region and the second deposition region of the chamber body.

11. The apparatus of claim 1 , wherein the first deposition region is integrally connected to the second deposition region with an aperture.

12. The apparatus of claim 11 , wherein the aperture is of sufficient size to permit the passage therethrough of a substrate support having a substrate thereon.

13. The apparatus of claim 11 , wherein the inert gas flow provides a laminar flow around the area of the aperture.

14. The apparatus of claim 13 , wherein the inert gas flow is provided around the area of the aperture through orifices.

15. The apparatus of claim 1 , further comprising a gas exhaust pump coupled to the chamber body.

16. The apparatus of claim 1 , wherein the chamber body has at least one sidewall shared by the first deposition region and the second deposition region.

17. The apparatus of claim 16 , wherein the chamber body further comprises:
a bottom coupled to the sidewalls having the substrate support extending therefrom.

18. The apparatus of claim 16 , further comprising:
a gas supply panel coupled with the vacuum chamber body, wherein the gas supply panel includes separate gas supply lines coupled with the first gas port and the second gas port.

19. The apparatus of claim 1 , wherein the first deposition region and the second deposition region are arranged vertically.

Assignees

• Applied Materials Inc

Inventors

• Chin Barry L
• Mak Alfred W
• Lei Lawrence C
• Xi Ming
• Chung Hua
• Lai Ken Kaung
• Byun Jeong Soo

Classifications

• C23C16/45548

  having arrangements for gas injection at different locations of the reactor for each ALD half-reaction · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/45551

  for relative movement of the substrate and the gas injectors or half-reaction reactor compartments · CPC title