Vertical tunneling field-effect transistor cell

Patent metadata

Field	Value
Publication number	US-9029940-B2
Application number	US-201313773462-A
Country	US
Kind code	B2
Filing date	Feb 21, 2013
Priority date	Jan 18, 2013
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

A tunneling field-effect transistor (TFET) device is disclosed. The TFET device includes a source contact on the source region, a plurality of gate contacts at a planar portion of a gate stack and a plurality of drain contacts disposed on a drain region. The source contact of the TFET device aligns with other two adjacent source contacts of other two TFET devices such that each source contact locates in one of three angles of an equilateral triangle.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a protrusion structure disposed over the substrate and protruding out of the plane of substrate;
a gate stack disposed over the substrate, wherein the gate stack includes a planar portion, which is symmetrically to the protrusion structure and parallel to the surface of substrate and a gating surface, which wraps around a middle portion of the protrusion structure; and
a source region disposed as a top po…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Chuang Harry-Hak-Lay
• Kuo Cheng-Cheng
• Zhu Ming

Classifications

• H10W20/20

  Electricity · mapped topic

• H10D84/83

  Electricity · mapped topic

• H10D64/519

  Electricity · mapped topic

• H10D64/512

  Electricity · mapped topic

• H10D64/259

  Electricity · mapped topic