Semiconductor device

Patent metadata

Field	Value
Publication number	US-9136263-B2
Application number	US-201414166937-A
Country	US
Kind code	B2
Filing date	Jan 29, 2014
Priority date	Feb 5, 2013
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

Provided is a semiconductor device which uses a comb-like N-type MOS transistor as an ESD protection element and is capable of uniformly operating the entire comb-like N-type MOS transistor. By adjusting a length L of a gate electrode of the N-type MOS transistor used as the ESD protection element in accordance with the distance from a contact for fixing a substrate potential, which is provided on a guard ring around an outer periphery, respective portion of N-type MOS transistor represented as a comb teeth uniformly enter snap-back operation, permitting avoidance of local concentration of current and obtainment of a desired ESD tolerance.

First claim

What is claimed is:

1. A semiconductor device having an ESD protection element which utilizes an N-type MOS transistor having an integral structure of a plurality of transistors, the semiconductor device comprising:
a plurality of drain regions and a plurality of source regions alternately arranged each other;
a gate electrode formed between each of the plurality of drain regions and each of the plurality of source regions; and
a substrate contact to which a metal interconnect…

Assignees

• Seiko Instr Inc

Inventors

• Koyama Takeshi
• Risaki Tomomitsu

Classifications

• H10D64/257

  Electricity · mapped topic

• H10D89/815 Primary

  Electricity · mapped topic

• H10D89/811 Primary

  Electricity · mapped topic

• H10D64/519 Primary

  Electricity · mapped topic

• H01L27/0266 Primary

  Electricity · mapped topic