Wafers, panels, semiconductor devices, and glass treatment methods

Patent metadata

Field	Value
Publication number	US-9012912-B2
Application number	US-201313802484-A
Country	US
Kind code	B2
Filing date	Mar 13, 2013
Priority date	Mar 13, 2013
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

Glass treatment methods, wafer, panels, and semiconductor devices are disclosed. In some embodiments, a method of treating a glass substrate includes forming a first film on the glass substrate, the first film having a first porosity. The method includes forming a second film on the first film, the second film comprising an electrically insulating material and having a second porosity. The first porosity is lower than the second porosity.

First claim

What is claimed is:

1. A method of forming a wafer or panel, the method comprising:
providing a glass substrate having two sides;
forming a plurality of through glass vias (TGVs) disposed within the glass substrates;
forming a first film on the two sides of the glass substrate and on sidewalls of the plurality of TGVs, the first film having a first porosity; and
forming a second film on the first film, the second film comprising an electrically insulating material and having…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Liao Wen-Shiang

Classifications

• H10P14/3454

  Electricity · mapped topic

• H10W72/20

  Electricity · mapped topic

• H10W70/662

  Electricity · mapped topic

• H10W70/635

  Electricity · mapped topic

• H10W70/095

  Electricity · mapped topic