Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar
US-2024419761-A1 · Dec 19, 2024 · US
US9000412B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9000412-B2 |
| Application number | US-201213561558-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2012 |
| Priority date | Jul 30, 2012 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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A switching device and an operating method for the same and a memory array are provided. The switching device comprises a first solid electrolyte, a second solid electrolyte and a switching layer. The switching layer is adjoined between the first solid electrolyte and the second solid electrolyte.
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What is claimed is: 1. A memory structure, comprising: a first electrode; a second electrode; a switching device; a memory device having a protruding portion protruding into the second electrode, the memory and the switching device being electrically connected between the first electrode and the second electrode; an another second electrode; an another switching device; an another memory device, the another memory and the another switching device being electrically con…
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