Semiconductor device
US-2024363707-A1 · Oct 31, 2024 · US
Semiconductor device manufacturing method
US8999841B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8999841-B2 |
| Application number | US-201213566515-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 3, 2012 |
| Priority date | Aug 5, 2011 |
| Publication date | Apr 7, 2015 |
| Grant date | Apr 7, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device manufacturing method comprising: modifying a surface of a burying recess formed in a dielectric film by supplying dimethylethylenediamine in a liquid or a gaseous state to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer, wherein the dimethylethylenediamine is adsorbed onto the surface of the dielectric film…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P70/234Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8999841B2 cover?
- A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydr…
- Who is the assignee on this patent?
- Ishizaka Tadahiro, Gomi Atsushi, Suzuki Kenzi, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P70/234. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).