Component of substrate processing apparatus and method for forming a film thereon

US8999475B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8999475-B2
Application numberUS-35521009-A
CountryUS
Kind codeB2
Filing dateJan 16, 2009
Priority dateJan 22, 2008
Publication dateApr 7, 2015
Grant dateApr 7, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.

First claim

Opening claim text (preview).

What is claimed is: 1. A component of a substrate processing apparatus that performs plasma processing on a substrate, the component comprising: an aluminum base mainly formed of an aluminum alloy containing silicon; and an alumite film having heat resistance to heat applied when the plasma processing is performed and including a barrier layer and a porous layer formed on the barrier layer such that the porous layer has a plurality of pores each having an opening passage, the al…

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • C25D11/005Primary

    Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

  • C25D21/02Primary

    Chemistry & Metallurgy · mapped topic

  • C25D11/02Primary

    Chemistry & Metallurgy · mapped topic

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What does patent US8999475B2 cover?
A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film i…
Who is the assignee on this patent?
Mitsuhashi Koji, Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification C25D11/005. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 07 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).