Memory device and driving method of the memory device
US-9224472-B2 · Dec 29, 2015 · US
US8994400B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8994400-B2 |
| Application number | US-201313872286-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 29, 2013 |
| Priority date | Dec 11, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a latch portion; an insulating layer over the latch portion; and a data holding portion operationally connected to the latch portion to hold data of the latch portion, the latch portion comprising: a transistor, wherein a channel formation region of the transistor of the latch portion includes crystalline silicon, the data holding portion comprising: a transistor; and a capacitor having a pair of elect…
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
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Electricity · mapped topic
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