Semiconductor devices including a nanowire and methods of manufacturing the same

Patent metadata

Field	Value
Publication number	US-8993991-B2
Application number	US-201113193690-A
Country	US
Kind code	B2
Filing date	Jul 29, 2011
Priority date	Dec 14, 2010
Publication date	Mar 31, 2015
Grant date	Mar 31, 2015

Abstract

Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface, the first and second top surfaces connected via the first perpendicular surface;
a first region doped with dopants and formed on the first top surface;
a first nanowire extended away from the first perpendicular surface in one direction, and being spaced apart from the second top surface, the first nanowire including a channel region touching the first region;
a second nanowire extended from the first nanowire in the one direction, being spaced apart from the second top surface, and including a second region doped with dopants and directly contacting the channel region, wherein
the first region is a source and the second region is a drain, or
the first region is a drain and the second region is a source;

a gate electrode formed on the first nanowire; and
a dielectric layer formed between the first nanowire and the gate electrode.

2. The semiconductor device of claim 1 , wherein the substrate further comprises:
a third top surface disposed at a side of the first top surface, and being higher in level than the second top surface; and
a second perpendicular surface, and
wherein the first and third top surfaces are connected via the second perpendicular surface.

3. The semiconductor device of claim 1 , further comprising:
a nucleated seed disposed on a side surface of the second nanowire,
wherein the second nanowire is disposed between the nucleated seed and the first nanowire.

4. The semiconductor device of claim 3 , wherein the substrate further comprises a third top surface disposed at one side of the second top surface and being higher in level than the second top surface;
wherein the first top surface is disposed at another side of the second top surface opposite to the one side; and
wherein the nucleated seed is in contact with the third top surface.

5. The semiconductor device of claim 1 , further comprising:
a protection layer disposed on the first top surface.

6. The semiconductor device of claim 1 , wherein the first and second nanowires make one-body; and
wherein the first and second nanowires are extended to be parallel to the second top surface.

7. The semiconductor device of claim 1 , wherein the first and second nanowires make one-body; and
wherein the first and second nanowires are extended in a direction making an acute angle with the first perpendicular surface.

8. The semiconductor device of claim 1 , wherein each of the first and second nanowires comprises:
a core having a first material; and
a shell surrounding the core and having a second material different from the first material.

9. The semiconductor device of claim 1 , further comprising:
a first conductive pattern electrically connected to the first region; and
a second conductive pattern electrically connected to the second region.

10. The semiconductor device of claim 1 , further comprising:
a nucleated seed made of gold and disposed on a side surface of the second nanowire, the nucleated seed for growing the first and second nanowires,
wherein the second nanowire is disposed between the nucleated seed and the first nanowire.

11. The semiconductor device of claim 1 , wherein each of the first and second nanowires comprises a core, having a first material, and a shell that surrounds and touches the core, has a second material different from the first material, and is both coaxial and coextensive with the core.

12. The semiconductor device of claim 1 , wherein the first region is formed above the first top surface.

Assignees

• Suh Dongwoo
• Kim Sung Bock
• Ryu Hojun
• Korea Electronics Telecomm

Inventors

• Suh Dongwoo
• Kim Sung Bock
• Ryu Hojun

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/279

  Vapour-liquid-solid growth · CPC title